Analysis of Bifurcation of Electric Spatial Pattern in Semiconductors Using a Potential with Two Internal Variables
Summary :
Theoretical description with a potential is made for inhomogeneous structures of high field domain and current filament in semiconductors with a negative differential conductivity (NDC) appearing under voltage- and current-controlled conditions, respectively. The potential proposed here can describe systematically a route from homogeneous state to the patterned state through the instability of homogeneous state, whereas previously proposed potentials can describe only the patterned state. The potential is constructed from two internal variables: one is the variable dependent on the spatial coordinate which exhibits the spatial pattern in the NDC region, while another remains constant spatially but changes discontinuously its value when the patterned state bifurcates from a thermodynamic branch of the homogeneous state. The bifurcation to spatial pattern is examined in a similar way to the first-order phase transition in equilibrium systems. At the same time, the property of the resulting pattern is discussed from analogy with the phase separation.
- Publication
- IEICE TRANSACTIONS on transactions Vol.E73-E No.6 pp.908-914
- Publication Date
- 1990/06/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- PAPER
- Category
- Nonlinear Problems
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Kiyoshi TOKO, Shu EZAKI, Takanori FUJIYOSHI, Kaoru YAMAFUJI, "Analysis of Bifurcation of Electric Spatial Pattern in Semiconductors Using a Potential with Two Internal Variables" in IEICE TRANSACTIONS on transactions,
vol. E73-E, no. 6, pp. 908-914, June 1990, doi: .
Abstract: Theoretical description with a potential is made for inhomogeneous structures of high field domain and current filament in semiconductors with a negative differential conductivity (NDC) appearing under voltage- and current-controlled conditions, respectively. The potential proposed here can describe systematically a route from homogeneous state to the patterned state through the instability of homogeneous state, whereas previously proposed potentials can describe only the patterned state. The potential is constructed from two internal variables: one is the variable dependent on the spatial coordinate which exhibits the spatial pattern in the NDC region, while another remains constant spatially but changes discontinuously its value when the patterned state bifurcates from a thermodynamic branch of the homogeneous state. The bifurcation to spatial pattern is examined in a similar way to the first-order phase transition in equilibrium systems. At the same time, the property of the resulting pattern is discussed from analogy with the phase separation.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e73-e_6_908/_p
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@ARTICLE{e73-e_6_908,
author={Kiyoshi TOKO, Shu EZAKI, Takanori FUJIYOSHI, Kaoru YAMAFUJI, },
journal={IEICE TRANSACTIONS on transactions},
title={Analysis of Bifurcation of Electric Spatial Pattern in Semiconductors Using a Potential with Two Internal Variables},
year={1990},
volume={E73-E},
number={6},
pages={908-914},
abstract={Theoretical description with a potential is made for inhomogeneous structures of high field domain and current filament in semiconductors with a negative differential conductivity (NDC) appearing under voltage- and current-controlled conditions, respectively. The potential proposed here can describe systematically a route from homogeneous state to the patterned state through the instability of homogeneous state, whereas previously proposed potentials can describe only the patterned state. The potential is constructed from two internal variables: one is the variable dependent on the spatial coordinate which exhibits the spatial pattern in the NDC region, while another remains constant spatially but changes discontinuously its value when the patterned state bifurcates from a thermodynamic branch of the homogeneous state. The bifurcation to spatial pattern is examined in a similar way to the first-order phase transition in equilibrium systems. At the same time, the property of the resulting pattern is discussed from analogy with the phase separation.},
keywords={},
doi={},
ISSN={},
month={June},}
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TY - JOUR
TI - Analysis of Bifurcation of Electric Spatial Pattern in Semiconductors Using a Potential with Two Internal Variables
T2 - IEICE TRANSACTIONS on transactions
SP - 908
EP - 914
AU - Kiyoshi TOKO
AU - Shu EZAKI
AU - Takanori FUJIYOSHI
AU - Kaoru YAMAFUJI
PY - 1990
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E73-E
IS - 6
JA - IEICE TRANSACTIONS on transactions
Y1 - June 1990
AB - Theoretical description with a potential is made for inhomogeneous structures of high field domain and current filament in semiconductors with a negative differential conductivity (NDC) appearing under voltage- and current-controlled conditions, respectively. The potential proposed here can describe systematically a route from homogeneous state to the patterned state through the instability of homogeneous state, whereas previously proposed potentials can describe only the patterned state. The potential is constructed from two internal variables: one is the variable dependent on the spatial coordinate which exhibits the spatial pattern in the NDC region, while another remains constant spatially but changes discontinuously its value when the patterned state bifurcates from a thermodynamic branch of the homogeneous state. The bifurcation to spatial pattern is examined in a similar way to the first-order phase transition in equilibrium systems. At the same time, the property of the resulting pattern is discussed from analogy with the phase separation.
ER -
English
