The basic properties of 1.55µm GaInAsP/InP distributed reflector (DR) laser were analyzed from the view points of active region structure and π/2 phase shift position. By introducing SCH structure with thin active layer, differential quantum efficiency could be improved up to 60-70% without sacrificing threshold current density. Optimum π/2 phase shift position for high power operation was found to be located inside the active region at a distance of 0.3 times of active region length from the joint portion between active and passive regions.
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Jong-In SHIM, Shigehisa ARAI, Kazuhiro KOMORI, Yasuharu SUEMATSU, "Theoretical Analysis for High Efficiency Operation in Distributed Reflector (DR) Type Lasers" in IEICE TRANSACTIONS on transactions,
vol. E73-E, no. 8, pp. 1378-1383, August 1990, doi: .
Abstract: The basic properties of 1.55µm GaInAsP/InP distributed reflector (DR) laser were analyzed from the view points of active region structure and π/2 phase shift position. By introducing SCH structure with thin active layer, differential quantum efficiency could be improved up to 60-70% without sacrificing threshold current density. Optimum π/2 phase shift position for high power operation was found to be located inside the active region at a distance of 0.3 times of active region length from the joint portion between active and passive regions.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e73-e_8_1378/_p
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@ARTICLE{e73-e_8_1378,
author={Jong-In SHIM, Shigehisa ARAI, Kazuhiro KOMORI, Yasuharu SUEMATSU, },
journal={IEICE TRANSACTIONS on transactions},
title={Theoretical Analysis for High Efficiency Operation in Distributed Reflector (DR) Type Lasers},
year={1990},
volume={E73-E},
number={8},
pages={1378-1383},
abstract={The basic properties of 1.55µm GaInAsP/InP distributed reflector (DR) laser were analyzed from the view points of active region structure and π/2 phase shift position. By introducing SCH structure with thin active layer, differential quantum efficiency could be improved up to 60-70% without sacrificing threshold current density. Optimum π/2 phase shift position for high power operation was found to be located inside the active region at a distance of 0.3 times of active region length from the joint portion between active and passive regions.},
keywords={},
doi={},
ISSN={},
month={August},}
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TY - JOUR
TI - Theoretical Analysis for High Efficiency Operation in Distributed Reflector (DR) Type Lasers
T2 - IEICE TRANSACTIONS on transactions
SP - 1378
EP - 1383
AU - Jong-In SHIM
AU - Shigehisa ARAI
AU - Kazuhiro KOMORI
AU - Yasuharu SUEMATSU
PY - 1990
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E73-E
IS - 8
JA - IEICE TRANSACTIONS on transactions
Y1 - August 1990
AB - The basic properties of 1.55µm GaInAsP/InP distributed reflector (DR) laser were analyzed from the view points of active region structure and π/2 phase shift position. By introducing SCH structure with thin active layer, differential quantum efficiency could be improved up to 60-70% without sacrificing threshold current density. Optimum π/2 phase shift position for high power operation was found to be located inside the active region at a distance of 0.3 times of active region length from the joint portion between active and passive regions.
ER -