Current leakage along longitudinal direction, from active region to connected external waveguide or neighboring opto-electronic (O-E) functional region, commonly occurs in integrated type semiconductor lasers. This current leakage degrades not only lasing characteristics but also interrupts operation of neighboring functional devices. In this paper, the longitudinal current leakage is analytically given for an integrated laser by introducing an effective length of leakage current along the longitudinal direction. The minimum lengths of active region and isolation region to minimize the influence of longitudinal current leakage were clarified. As the results, shortening of current injection region with respect to the active region length as well as increasing sheet resistance were found to be effective for reduction of leakage current.
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Copy
Kazuhiro KOMORI, Shigehisa ARAI, Yasuharu SUEMATSU, "Longitudinal Current Leakage in Integrated Laser" in IEICE TRANSACTIONS on transactions,
vol. E73-E, no. 8, pp. 1384-1392, August 1990, doi: .
Abstract: Current leakage along longitudinal direction, from active region to connected external waveguide or neighboring opto-electronic (O-E) functional region, commonly occurs in integrated type semiconductor lasers. This current leakage degrades not only lasing characteristics but also interrupts operation of neighboring functional devices. In this paper, the longitudinal current leakage is analytically given for an integrated laser by introducing an effective length of leakage current along the longitudinal direction. The minimum lengths of active region and isolation region to minimize the influence of longitudinal current leakage were clarified. As the results, shortening of current injection region with respect to the active region length as well as increasing sheet resistance were found to be effective for reduction of leakage current.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e73-e_8_1384/_p
Copy
@ARTICLE{e73-e_8_1384,
author={Kazuhiro KOMORI, Shigehisa ARAI, Yasuharu SUEMATSU, },
journal={IEICE TRANSACTIONS on transactions},
title={Longitudinal Current Leakage in Integrated Laser},
year={1990},
volume={E73-E},
number={8},
pages={1384-1392},
abstract={Current leakage along longitudinal direction, from active region to connected external waveguide or neighboring opto-electronic (O-E) functional region, commonly occurs in integrated type semiconductor lasers. This current leakage degrades not only lasing characteristics but also interrupts operation of neighboring functional devices. In this paper, the longitudinal current leakage is analytically given for an integrated laser by introducing an effective length of leakage current along the longitudinal direction. The minimum lengths of active region and isolation region to minimize the influence of longitudinal current leakage were clarified. As the results, shortening of current injection region with respect to the active region length as well as increasing sheet resistance were found to be effective for reduction of leakage current.},
keywords={},
doi={},
ISSN={},
month={August},}
Copy
TY - JOUR
TI - Longitudinal Current Leakage in Integrated Laser
T2 - IEICE TRANSACTIONS on transactions
SP - 1384
EP - 1392
AU - Kazuhiro KOMORI
AU - Shigehisa ARAI
AU - Yasuharu SUEMATSU
PY - 1990
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E73-E
IS - 8
JA - IEICE TRANSACTIONS on transactions
Y1 - August 1990
AB - Current leakage along longitudinal direction, from active region to connected external waveguide or neighboring opto-electronic (O-E) functional region, commonly occurs in integrated type semiconductor lasers. This current leakage degrades not only lasing characteristics but also interrupts operation of neighboring functional devices. In this paper, the longitudinal current leakage is analytically given for an integrated laser by introducing an effective length of leakage current along the longitudinal direction. The minimum lengths of active region and isolation region to minimize the influence of longitudinal current leakage were clarified. As the results, shortening of current injection region with respect to the active region length as well as increasing sheet resistance were found to be effective for reduction of leakage current.
ER -