Narrow-beam and low threshold current characteristics have been realized for a 1.3 µm FS-BH (Facet Selective growth Buried Heterostructure) laser diode monolithically integrated with a tapered waveguide lens by a selective area epitaxial growth technique. The beam divergences in the perpendicular and horizontal directions have been reduced down to about 12. By the introduction of the strained quantum well structure and the optimized cavity structure, the threshold current has been kept as low as 6 mA which is comparable to the conventional Fabry-Perot laser diodes. Even at high temperature as high as 85, the threshold current and the operation current (P=10 mW) have been suppressed to as low as 23 mA and 63 mA, respectively. Furthermore error-floor-free characteristics for 622 Mbps-50 km transmission have been confirmed under severe optical feedback condition.

One-dimentional equivalent circuit model of a heterostructure InAlAs/InGaAs/InP metal-semiconductor-metal photodetector is discussed. In this photodetector, InGaAs is used as an optical absorption layer and the InAlAs is used for Schottky barrier enhanement. The measured S11 parameter deviates from equi-resistance lines on the Smith chart, indicating the equivalent circuit is different from the conventional equivalent circuit using a series resistance, a depletion region capacitance and a depletion region resistance. The difference is due to band discontinuity at the heterojunctions, and we propose a equivalent circuit taking account of the band discontinuity. The band discontinuity is expressed by parallel combination of a resistance and a capacitance. The measured S11 parameter can be fitted well with the calculated S11 parameter from the proposed equivalent circuit, and we can successfully extract the device parameters from the fitted curve.