IEICE TRANSACTIONS on Electronics
Equivalent Circuit Model of InAlAs/InGaAs/InP Heterostructure Metal-Semiconductor-Metal Photodetectors
Summary :
One-dimentional equivalent circuit model of a heterostructure InAlAs/InGaAs/InP metal-semiconductor-metal photodetector is discussed. In this photodetector, InGaAs is used as an optical absorption layer and the InAlAs is used for Schottky barrier enhanement. The measured S11 parameter deviates from equi-resistance lines on the Smith chart, indicating the equivalent circuit is different from the conventional equivalent circuit using a series resistance, a depletion region capacitance and a depletion region resistance. The difference is due to band discontinuity at the heterojunctions, and we propose a equivalent circuit taking account of the band discontinuity. The band discontinuity is expressed by parallel combination of a resistance and a capacitance. The measured S11 parameter can be fitted well with the calculated S11 parameter from the proposed equivalent circuit, and we can successfully extract the device parameters from the fitted curve.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E86-C No.11 pp.2278-2282
- Publication Date
- 2003/11/01
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- PAPER
- Category
- Lasers, Quantum Electronics
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Koichi IIYAMA, Junya ASHIDA, Akira TAKEMOTO, Saburo TAKAMIYA, "Equivalent Circuit Model of InAlAs/InGaAs/InP Heterostructure Metal-Semiconductor-Metal Photodetectors" in IEICE TRANSACTIONS on Electronics,
vol. E86-C, no. 11, pp. 2278-2282, November 2003, doi: .
Abstract: One-dimentional equivalent circuit model of a heterostructure InAlAs/InGaAs/InP metal-semiconductor-metal photodetector is discussed. In this photodetector, InGaAs is used as an optical absorption layer and the InAlAs is used for Schottky barrier enhanement. The measured S11 parameter deviates from equi-resistance lines on the Smith chart, indicating the equivalent circuit is different from the conventional equivalent circuit using a series resistance, a depletion region capacitance and a depletion region resistance. The difference is due to band discontinuity at the heterojunctions, and we propose a equivalent circuit taking account of the band discontinuity. The band discontinuity is expressed by parallel combination of a resistance and a capacitance. The measured S11 parameter can be fitted well with the calculated S11 parameter from the proposed equivalent circuit, and we can successfully extract the device parameters from the fitted curve.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e86-c_11_2278/_p
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@ARTICLE{e86-c_11_2278,
author={Koichi IIYAMA, Junya ASHIDA, Akira TAKEMOTO, Saburo TAKAMIYA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Equivalent Circuit Model of InAlAs/InGaAs/InP Heterostructure Metal-Semiconductor-Metal Photodetectors},
year={2003},
volume={E86-C},
number={11},
pages={2278-2282},
abstract={One-dimentional equivalent circuit model of a heterostructure InAlAs/InGaAs/InP metal-semiconductor-metal photodetector is discussed. In this photodetector, InGaAs is used as an optical absorption layer and the InAlAs is used for Schottky barrier enhanement. The measured S11 parameter deviates from equi-resistance lines on the Smith chart, indicating the equivalent circuit is different from the conventional equivalent circuit using a series resistance, a depletion region capacitance and a depletion region resistance. The difference is due to band discontinuity at the heterojunctions, and we propose a equivalent circuit taking account of the band discontinuity. The band discontinuity is expressed by parallel combination of a resistance and a capacitance. The measured S11 parameter can be fitted well with the calculated S11 parameter from the proposed equivalent circuit, and we can successfully extract the device parameters from the fitted curve.},
keywords={},
doi={},
ISSN={},
month={November},}
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TY - JOUR
TI - Equivalent Circuit Model of InAlAs/InGaAs/InP Heterostructure Metal-Semiconductor-Metal Photodetectors
T2 - IEICE TRANSACTIONS on Electronics
SP - 2278
EP - 2282
AU - Koichi IIYAMA
AU - Junya ASHIDA
AU - Akira TAKEMOTO
AU - Saburo TAKAMIYA
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 2003
AB - One-dimentional equivalent circuit model of a heterostructure InAlAs/InGaAs/InP metal-semiconductor-metal photodetector is discussed. In this photodetector, InGaAs is used as an optical absorption layer and the InAlAs is used for Schottky barrier enhanement. The measured S11 parameter deviates from equi-resistance lines on the Smith chart, indicating the equivalent circuit is different from the conventional equivalent circuit using a series resistance, a depletion region capacitance and a depletion region resistance. The difference is due to band discontinuity at the heterojunctions, and we propose a equivalent circuit taking account of the band discontinuity. The band discontinuity is expressed by parallel combination of a resistance and a capacitance. The measured S11 parameter can be fitted well with the calculated S11 parameter from the proposed equivalent circuit, and we can successfully extract the device parameters from the fitted curve.
ER -
English
