A modified 0.35 µm gate-length MOSFET large-signal microwave device model, based on the widely used BSIM3 model, is presented in this report. This large-signal microwave model includes a BSIM3 model together with the passive components required to fit the device dc and microwave characteristics over a wide range of biasing points and frequency operation. In this report, we propose a methodology to improve the device microwave linearity by controlling a suitable biasing condition, which is based on the predictions of this modified CMOS large-signal model. The input IM3 enhances more than 10 dB at a 2.4 GHz operation. Furthermore, the adjacent channel power ratio also improves 7.5 dB with proper choosing device dc bias.

This article presents the CMOS transimpedance amplifier (TIA) for gigabits optical communication, where an analytical method for designing a wideband TIA using different inductive peaking technology is introduced. In this study, we derive and analyze the transfer function (Vout/Iin) of the TIA circuit from the equivalent circuit model. By adding the peaking inductor in different locations, the TIA 3-dB bandwidth can be enhanced without sacrificing the transimpedance gain. These TIA designs have been realized by the advanced CMOS process, and the measured results confirm the predictions from the analytic approach, where the inductive peaking is an useful way to enhance the TIA bandwidth.