A simple modeling technique for symmetric inductors is proposed. Using the proposed technique, all model parameters for an equivalent circuit of symmetric inductors are easily calculated from geometric, process and substrate resistance parameters without using electromagnetic (EM) simulators. Comparison of simulated results with measured results verifies the effectiveness of the proposed modeling technique up to 5 GHz with center-tapped or non-center-tapped configurations.

Junction leakage current of trench isolation devices is strongly influenced by trench configuration. The origin of the leakage current is the mechanical stress that is generated by the differential thermal expansion between the Si substrate and the SiO2 filled isolation trench during the isolation forming process. A two-dimensional mechanical stress simulation was used to analyze trench-isolated devices. The simulated distribution and magnitude of stress were found to agree with Raman spectroscopic measurements of actual devices. The stress in the deeper regions between deep trenches is likely to increase greatly as the size of devices diminishes, so it is important to reduce this stress and thus suppress junction leakage current.