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[Author] Hiroshi IWAI(11hit)

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  • Equivalent Noise Temperature Representation for Scaled MOSFETs

    Hiroshi SHIMOMURA  Kuniyuki KAKUSHIMA  Hiroshi IWAI  

     
    LETTER-Semiconductor Materials and Devices

      Vol:
    E93-C No:10
      Page(s):
    1550-1552

    We proposed a novel representation of the thermal noise for scaled MOSFETs by applying an extended van der Ziel's model. A comparison between the proposed representation and Pospieszalski's model is also performed. We confirmed that the representation of drain noise temperature, Td corresponds to the electron temperature in a gradual channel region.

  • Monte Carlo Analysis of Velocity Overshoot Effects in Bipolar Devices with and without an i-Layer

    Yoshiroh TSUBOI  Claudio FIFGNA  Enrico SANGIORGI  Bruno RICCÒ  Tetsunori WADA  Yasuhiro KATSUMATA  Hiroshi IWAI  

     
    PAPER-Device Simulation

      Vol:
    E77-C No:2
      Page(s):
    174-178

    We investigated the impact of velocity overshoot effect on collector signal delay of bipolar devices by using Monte Carlo simulation method. We found that insertion of an i-layer (lightly doped, intrinsic layer) between base and collector can increase the delay, but the strength of this effect is a function of the i-layer thickness. When the i-layer becomes thinner, the problem of increasing delay seems to disappear. This recovery of delay is realised with a mechanism which is completely different from that in drift-diffusion model.

  • A Spatial Fading Emulator for Evaluation of MIMO Antennas in a Cluster Environment

    Tsutomu SAKATA  Atsushi YAMAMOTO  Koichi OGAWA  Hiroshi IWAI  Jun-ichi TAKADA  Kei SAKAGUCHI  

     
    PAPER

      Vol:
    E97-B No:10
      Page(s):
    2127-2135

    This paper presents a spatial fading emulator for evaluating handset MIMO antennas in a cluster environment. The proposed emulator is based on Clarke's model and has the ability to control RF signals directly in spatial domain to generate an accurate radio propagation channel model, which includes both uniform and non-uniform angular power spectra (APS) in the horizontal plane. Characteristics of a propagation channel such as fading correlations, eigenvalues and MIMO channel capacities of handset antennas located in the vicinity of the emulator's ring can be evaluated. The measured results show that the fading emulator with 31 antenna probes is sufficient to evaluate fading correlation and MIMO channel capacity of handset antenna in the case of a narrow APS with the standard deviation of more than 20 degrees.

  • Parasitic Effects in Multi-Gate MOSFETs

    Yusuke KOBAYASHI  C. Raghunathan MANOJ  Kazuo TSUTSUI  Venkanarayan HARIHARAN  Kuniyuki KAKUSHIMA  V. Ramgopal RAO  Parhat AHMET  Hiroshi IWAI  

     
    PAPER-Integrated Electronics

      Vol:
    E90-C No:10
      Page(s):
    2051-2056

    In this paper, we have systematically investigated parasitic effects due to the gate and source-drain engineering in multi-gate transistors. The potential impact of high-K dielectrics on multi-gate MOSFETs (MuGFETs), such as FinFET, is evaluated through 2D and 3D device simulations over a wide range of proposed dielectric values. It is observed that introduction of high-K dielectrics will significantly degrade the short channel effects (SCEs), however a combination of oxide and high-K stack can effectively control this degradation. The degradation is mainly due to the increase in the internal fringe capacitance coupled with the decrease in gate-channel capacitance. From the circuit perspective, an optimum K value has been identified through mixed mode simulations. Further, as a part of this work, the importance of optimization of the shape of the spacer region is highlighted through full 3D simulations.

  • A 1. 5 GHz CMOS Low Noise Amplifier

    Ryuichi FUJIMOTO  Shoji OTAKA  Hiroshi IWAI  Hiroshi TANIMOTO  

     
    PAPER

      Vol:
    E81-A No:3
      Page(s):
    382-388

    A 1. 5 GHz low noise amplifier (LNA) was designed and fabricated by using CMOS technology. The measured associated gain (Ga) of the LNA is 13. 8 dB, the minimum noise figure (NFmin) is 2. 9 dB and the input-referred third-order intercept point (IIP3) is -2. 5 dBm at 1. 5 GHz. The LNA consumes 8. 6 mA from a 3. 0 V supply voltage. These measured results indicate a potential of short channel MOSFETs for high-frequency and low-noise applications.

  • Performance Evaluation of Spatial Correlation Characteristics for Handset Antennas Using Spatial Fading Emulator Based on Clarke's Model

    Hiroshi IWAI  Kei SAKAGUCHI  Tsutomu SAKATA  Atsushi YAMAMOTO  

     
    PAPER-Mobile Propagation

      Vol:
    E93-B No:10
      Page(s):
    2514-2522

    This paper describes a spatial fading emulator based on Clarke's model that can evaluate spatial correlation characteristics between signals received by handset antennas including human-body effect under emulated multipath propagation environments. The proposed model is composed of scatterers, phase-shifters and attenuators. The scatterers are located at equal intervals on the circumference of a circle. Phase shifters and attenuators in a control circuit are used to control the phase and amplitude of each wave radiated from the scatterers in order to emulate multi-path propagation environments, such as Rayleigh or Nakagami-Rice distribution, to be generated at their center. In this paper, the maximum distance between receiving antennas that could be used to evaluate spatial correlation characteristics between antennas was investigated experimentally. The measurement results show that 15 scatterers with a radius of 1.5 m are sufficient to evaluate spatial correlation characteristics within the branch separation of 1.7 λ when parallel dipole antennas are used as receiving antennas.

  • Mechanical Stress Analysis of Trench Isolation Using a Two-Dimensional Simulation

    Satoshi MATSUDA  Nobuyuki ITOH  Chihiro YOSHINO  Yoshiroh TSUBOI  Yasuhiro KATSUMATA  Hiroshi IWAI  

     
    PAPER-Process Simulation

      Vol:
    E77-C No:2
      Page(s):
    124-128

    Junction leakage current of trench isolation devices is strongly influenced by trench configuration. The origin of the leakage current is the mechanical stress that is generated by the differential thermal expansion between the Si substrate and the SiO2 filled isolation trench during the isolation forming process. A two-dimensional mechanical stress simulation was used to analyze trench-isolated devices. The simulated distribution and magnitude of stress were found to agree with Raman spectroscopic measurements of actual devices. The stress in the deeper regions between deep trenches is likely to increase greatly as the size of devices diminishes, so it is important to reduce this stress and thus suppress junction leakage current.

  • Performance Analysis of MIMO Schemes in Residential Home Environment via Wideband MIMO Propagation Measurement

    Gia Khanh TRAN  Nguyen Dung DAO  Kei SAKAGUCHI  Kiyomichi ARAKI  Hiroshi IWAI  Tsutomu SAKATA  Koichi OGAWA  

     
    PAPER-Communication Theory and Signals

      Vol:
    E93-A No:4
      Page(s):
    814-829

    This paper illustrates a large-scale MIMO propagation channel measurement in a real life environment and evaluates throughput performance of various MIMO schemes in that environment. For that purpose, 44 MIMO transceivers and a novel spatial scanner are fabricated for wideband MIMO channel measurements in the 5 GHz band. A total of more than 50,000 spatial samples in an area of 150 m2, which includes a bedroom, a Japanese room, a hallway, and the living and dining areas, are taken in a real residential home environment. Statistical properties of the propagation channel and throughput performance of various MIMO schemes are evaluated by using measured data. Propagation measurement results show large dynamic channel variations occurring in a real environment in which statistical properties of the channel, such as frequency correlation and spatial correlation are not stationary any more, and become functions of the SNR. Furthermore, evaluation of throughput shows that although MIMO schemes outperform the SISO system in most areas, open loop systems perform badly in the far areas with low SNR. Paying for the cost of CSI or partial CSI at Tx, closed loop and hybrid systems have superior performance compared to other schemes, especially in reasonable SNR areas ranging from 10 dB to 30 dB. Spatial correlation, which is common in Japanese wooden residences, is also found to be a dominant factor causing throughput degradation of the open loop MIMO schemes.

  • Effect of High Frequency Noise Current Sources on Noise Figure for Sub-50 nm Node MOSFETs

    Hiroshi SHIMOMURA  Kuniyuki KAKUSHIMA  Hiroshi IWAI  

     
    PAPER-Semiconductor Materials and Devices

      Vol:
    E93-C No:5
      Page(s):
    678-684

    The downscaling of CMOS technology has resulted in strong improvement in RF performance of bulk and SOI MOSFETs. In order to realize a low-noise RF circuit, a deeper understanding of the noise performance for MOSFETs is required. Thermal noise is the main noise source of the CMOS device for high frequency performance, and is dominated by the drain channel noise, induced gate noise, and their correlation noise. In this work, we measured the RF noise parameter (Fmin, Rn, Γ opt) of 45 nm node MOSFETs from 5 to 15 GHz and extracted noise sources and noise coefficients P, R, and C by using an extended van der Ziel's model. We found, for the first time, that correlation coefficient C decreases from positive to negative values when the gate length is reduced continuously with the gate length of sub-100 nm. We confirmed that Pucel's noise figure model, using noise coefficients P, R, and C, can be considered a good approximation even for sub-50 nm MOSFETs. We also discussed a scaling effect of the noise coefficients, especially the correlation noise coefficient C on the minimum noise figure.

  • A Low-Profile Bi-Directional Cavity Antenna with Broadband Impedance Characteristics

    Atsushi YAMAMOTO  Hiroshi IWAI  Toshimitsu MATSUYOSHI  Koichi OGAWA  

     
    PAPER-Mobile Antennas

      Vol:
    E84-B No:9
      Page(s):
    2490-2497

    A low-profile bi-directional cavity antenna has been developed for the IMT-2000 indoor base stations. The geometrical relationships required for the design of an antenna with broadband impedance characteristics, which are obtained as a superposition of two resonant modes (M-antenna + metal case), are presented. The approximate equations describing the resonant frequencies associated with the two resonant modes are derived. By using the equations, a cavity antenna with dimensions of 120 mm 120 mm 12 mm and a fractional bandwidth of 18.3% (VSWR <2) that meets the IMT-2000 specification can be designed successfully. The proposed design procedure of the antenna is confirmed by the measurements.

  • 3-D Angular Spectrum Measurements at 5 GHz in a Residential Two-Story House

    Hiroshi IWAI  Tsutomu SAKATA  Atsushi YAMAMOTO  Kei SAKAGUCHI  

     
    PAPER-Propagation

      Vol:
    E90-B No:9
      Page(s):
    2344-2351

    This paper presents an investigation of radio-wave propagation characteristics in the 5 GHz band in a residential two-story house. We investigated the 3-D angular spectra of incident waves when a transmitter and a receiver were situated on the first and second floors, respectively. First of all, correlation in the measured "home environment" containing furniture such as beds, a sofa and tables was determined to confirm a quasi-static environment. Then, 3-D angular spectra measurements were performed by using an eight-element Yagi-Uda antenna as a receiving antenna. Furthermore, the 4-by-4 MIMO channel capacity at each elevation angle was estimated by using elevation angular spectra and the propagation characteristics between the first and second floors were evaluated. The results indicated that the channel capacity in the elevation direction was strongly influenced by the direction of the transmitting antenna.