Equivalent Noise Temperature Representation for Scaled MOSFETs
Summary :
We proposed a novel representation of the thermal noise for scaled MOSFETs by applying an extended van der Ziel's model. A comparison between the proposed representation and Pospieszalski's model is also performed. We confirmed that the representation of drain noise temperature, Td corresponds to the electron temperature in a gradual channel region.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E93-C No.10 pp.1550-1552
- Publication Date
- 2010/10/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E93.C.1550
- Type of Manuscript
- LETTER
- Category
- Semiconductor Materials and Devices
Authors
Keyword
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Hiroshi SHIMOMURA, Kuniyuki KAKUSHIMA, Hiroshi IWAI, "Equivalent Noise Temperature Representation for Scaled MOSFETs" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 10, pp. 1550-1552, October 2010, doi: 10.1587/transele.E93.C.1550.
Abstract: We proposed a novel representation of the thermal noise for scaled MOSFETs by applying an extended van der Ziel's model. A comparison between the proposed representation and Pospieszalski's model is also performed. We confirmed that the representation of drain noise temperature, Td corresponds to the electron temperature in a gradual channel region.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.1550/_p
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@ARTICLE{e93-c_10_1550,
author={Hiroshi SHIMOMURA, Kuniyuki KAKUSHIMA, Hiroshi IWAI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Equivalent Noise Temperature Representation for Scaled MOSFETs},
year={2010},
volume={E93-C},
number={10},
pages={1550-1552},
abstract={We proposed a novel representation of the thermal noise for scaled MOSFETs by applying an extended van der Ziel's model. A comparison between the proposed representation and Pospieszalski's model is also performed. We confirmed that the representation of drain noise temperature, Td corresponds to the electron temperature in a gradual channel region.},
keywords={},
doi={10.1587/transele.E93.C.1550},
ISSN={1745-1353},
month={October},}
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TY - JOUR
TI - Equivalent Noise Temperature Representation for Scaled MOSFETs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1550
EP - 1552
AU - Hiroshi SHIMOMURA
AU - Kuniyuki KAKUSHIMA
AU - Hiroshi IWAI
PY - 2010
DO - 10.1587/transele.E93.C.1550
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2010
AB - We proposed a novel representation of the thermal noise for scaled MOSFETs by applying an extended van der Ziel's model. A comparison between the proposed representation and Pospieszalski's model is also performed. We confirmed that the representation of drain noise temperature, Td corresponds to the electron temperature in a gradual channel region.
ER -
English
