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Yoshinori ODA Kaung-Shia YU Thye-Lai TUNG Arthur RAEFSKY Donald L. SCHARFETTER Robert W. DUTTON
In this paper, a three part algorithm is employed to obtain stable convergence during stress dependent oxidation simulation using the finite element method is presented. By introducing (1) a reduced integration formulation, (2) an averaging procedure for the mid-side node velocities at the Si/SiO2 interface, and (3) a three-node element to discretize the oxidant diffusion equation, major improvements in achieving stable convergence are realized during stress dependent oxidation simulation. This technique is generally applicable for an oxidation simulator using the finite element method.