A new direct projection patterning technique of aluminum using synchrotron radiation (SR) is proposed. It is based on the thermal reaction control effect of SR excitation. In the case of the Si surface, pure thermal growth is possible at 200, however, this growth is suppressed perfectly by SR irradiation. On the other hand, Al growth on the SiO2 surface is impossible at the same temperature thermally, however, SR has an effect to initiate thermal reaction. Both new effects of SR, suppression and initiation, are clarified to be caused by atomic order level thin layers formed from CVD gases by SR excitation on the surfaces. By using these effects, the direct inverse and normal projection patterning of Al are successfully demonstrated.