A new direct projection patterning technique of aluminum using synchrotron radiation (SR) is proposed. It is based on the thermal reaction control effect of SR excitation. In the case of the Si surface, pure thermal growth is possible at 200, however, this growth is suppressed perfectly by SR irradiation. On the other hand, Al growth on the SiO2 surface is impossible at the same temperature thermally, however, SR has an effect to initiate thermal reaction. Both new effects of SR, suppression and initiation, are clarified to be caused by atomic order level thin layers formed from CVD gases by SR excitation on the surfaces. By using these effects, the direct inverse and normal projection patterning of Al are successfully demonstrated.

This paper presents an overview of research, development, standardization and regulation activities on ultra wideband (UWB) technologies in National Institute of Information and Communications Technology (NICT). NICT started a project on UWB technologies since 2002, and organized UWB consortium in cooperation with more than 20 companies and 7 universities in Japan. Up to now, we have been conducting numerous UWB R&D including the following main works: i) key technology development such as MMIC chips, antennas and other devices, ii) measurement and channel modeling for UWB signal propagation, iii) standardization in international activities of IEEE 802.15, ITU-R TG1/8 as well as in a national regulatory committee of Ministry of Internal Affair and Communications (MIC). The UWB systems we have studied occupy frequency bands range from microwave band (3-5 GHz) to quasi-millimeter wave band (24-29 GHz). Various prototype UWB systems including multi-functional terminals have been developed. The output of NICT has been succeeded by industrial parties with with national and international standardization and regulation.