Synchrotron Radiation Induced Direct Projection Patterning of Aluminum on Si and SiO₂ Surfaces

Fumihiko UESUGI, Iwao NISHIYAMA

Summary :

A new direct projection patterning technique of aluminum using synchrotron radiation (SR) is proposed. It is based on the thermal reaction control effect of SR excitation. In the case of the Si surface, pure thermal growth is possible at 200, however, this growth is suppressed perfectly by SR irradiation. On the other hand, Al growth on the SiO₂ surface is impossible at the same temperature thermally, however, SR has an effect to initiate thermal reaction. Both new effects of SR, suppression and initiation, are clarified to be caused by atomic order level thin layers formed from CVD gases by SR excitation on the surfaces. By using these effects, the direct inverse and normal projection patterning of Al are successfully demonstrated.

• Publication: IEICE TRANSACTIONS on Electronics Vol.E76-C No.1 pp.47-54
• Publication Date: 1993/01/25
• Type of Manuscript: Special Section PAPER (Special Issue on Opto-Electronics and LSI)
• Category: Opto-Electronics Technology for LSIs

Authors

Fumihiko UESUGI
Iwao NISHIYAMA

Keyword

synchrotron radiation,  surface modification,  aluminum,  chemical vapor deposition,  reaction control,  growth suppression,  growth initiation,  chemical shift