The low temperature deposition of AlN at 160 °C is examined by using trimethyl aluminum (TMA) and NH radicals from plasma excited Ar diluted ammonia. For the deposition, a plasma tube separated from the reaction chamber is used to introduce the neutral NH radicals on the growing surface without the direct impacts of high-speed species and UV photons, which might be effective in suppressing the plasma damage to the sample surfaces. To maximize the NH radical generation, the NH3 and Ar mixing ratio is optimized by plasma optical emission spectroscopy. To determine the saturated condition of TMA and NH radical irradiations, an in-situ surface observation of IR absorption spectroscopy (IRAS) with a multiple internal reflection geometry is utilized. The low temperature AlN deposition is performed with the TMA and NH radical exposures whose conditions are determined by the IRAS experiment. The spectroscopic ellipsometry indicates the all-round surface deposition in which the growth per cycles measured from front and backside surfaces of the Si sample are of the same range from 0.39∼0.41nm/cycle. It is confirmed that the deposited film contains impurities of C, O, N although we discuss the method to decrease them. X-ray diffraction suggests the AlN polycrystal deposition with crystal phases of AlN (100), (002) and (101). From the saturation curves of TMA adsorption and its nitridation, their chemical reactions are discussed in this paper. In the present paper, we discuss the possibility of the low temperature AlN deposition.

Aluminum Electrolytic Capacitors are widely used as the smoothing capacitors in power converter circuits. Recently, there are a lot of studies to detect the residual life of the smoothing Aluminum Electrolytic Capacitors from the information of the operational circuit, such as the ripple voltage and the ripple current of the smoothing capacitor. To develop this kind of technology, more precise impedance models of Aluminum Electrolytic Capacitors become desired. In the case of the low-temperature operation of the power converters, e.g., photovoltaic inverters, the impedance of the smoothing Aluminum Electrolytic Capacitor is the key to avoid the switching element failure due to the switching surge. In this paper, we introduce the impedance calculation model of Aluminum Electrolytic Capacitors, which provides accurate impedance values in wide temperature and frequency ranges.

The optical properties of arrays of nanoholes and nanoslits in Al films were investigated both numerically and experimentally. The choice of Al was based on its low cost and ease of processing, in addition to the fact that it has a higher plasma frequency than gold or silver, leading to lower optical losses at wavelengths of 400 to 500nm.

Recently, wireless power transfer has attracted much attention for power supplying on not only small electric devices but also large equipments such as electric and hybrid vehicles. Coils are important components in such power transfer systems and their AC resistance is a key factor to determine the transferring efficiency. The AC resistance of wires used in the coils is required to be as lower as possible for high efficiency systems. Copper clad aluminum (CCA) wire which has an aluminum (Al) core surrounded by a thin copper (Cu) layer has been proposed for this purpose. CCA wires are not only light-weight and easy for soldering but also show lower AC resistance than commonly used Cu wires on certain conditions. In this paper, the AC resistance caused by the skin and proximity effects of a CCA wire with circular cross-section is numerically analyzed. The condition that CCA wires are superior to Cu wires in view of AC resistance is discussed. Simulated results are compared with experiments on fabricated coils and good agreement is obtained. It is actually verified that coils wound by CCA wires have lower AC resistance than those by Cu wires under some circumstances, especially at high frequencies.

In this paper, the design and fabrication of a miniaturized class-F 2.5 GHz 8 W power amplifier using a commercially available GaN HEMT bare chip from TriQuint and a Selectively Anodized Aluminum Oxide (SAAO) substrate are presented. The SAAO process was recently proposed and patented by Wavenics Inc., Daejeon, Korea, which provides the fabrication of small size circuit comparable to conventional MMIC and at drastically low cost due to the use of aluminum as a wafer. The advantage of low cost is especially promising for RF components fabrication in commercial applications like mobile communications. The fabricated power amplifier has a compact size of 4.4 4.4 mm2 and shows power added efficiency (PAE) of about 35% and harmonic suppression of above 30 dBc for second and third harmonics at an output power of 39 dBm.

We investigated optical transmission characteristics of aluminum thin films with periodic hole arrays in sub-wavelength. We divided white light into several color spectra using a color filter based on the surface plasmon resonance (SPR) utilizing aluminum showing high plasma frequency. By optimizing a hole-array period, hole shape, polarization and index difference of two surface, transmittance of 30% and full-width at half-maximum of around 100 nm were achieved.

In this paper, an indoor repeater antenna with high isolation for WCDMA application is proposed. The designed repeater has very small separation of 20 mm between the donor and server antennas. The antenna has two resonance frequencies to cover the WCDMA band from 1.92 GHz to 2.17 GHz. The fabricated antenna has VSWR below 1.5, gain over 8 dBi, and isolation between server and donor antennas less than -80 dB in the WCDMA band.

We investigated the use of AlOx:N/SiNy stacked gate dielectric as an alternate gate dielectric, which were prepared by alternately repeating sub-nanometer deposition of Al2O3 from an alkylamine-stabilized AlH3 + N2O gas mixture and rapid thermal nitridation in NH3. The negative fix charges, being characteristics of almina, were as many as 3.91012 cm-2 in the effective net charge density. The effective dielectric constant and the breakdown field were 8.9 and 8 MV/cm, respectively, being almost the same as pure Al2O3. And we have demonstrated that the leakage current through the AlOx:N/SiNy stacked gate dielectric with a capacitance equivalent thickness (CET) of 1.9 nm is about two orders of magnitude less than that of thermally-grown SiO2. Also, we have confirmed the dielectric degradation similar to the stress-induced leakage current (SILC) mode and subsequent soft breakdown (SBD) reported in ultrathin SiO2 under constant current stress and a good dielectric reliability comparable to thermally-grown ultrahin SiO2. From the analysis of n+poly-Si gate metal-insulator-semiconductor field effect transistor (MISFET) performance, remote coulomb scattering due to changes in the gate dielectric plays an important role on the mobility degradation of MISFET with AlON/SiON gate stack.

We studied nitrogen incorporation in Al2O3 gate dielectrics by nitrogen plasma and examined the dependence of the electrical properties on the nitrogen incorporation. We found that the nitrogen concentration and profile in Al2O3 films thinner than 3 nm can be controlled by the substrate temperature and the plasma conditions. The electrical characterization showed that the plasma nitridation suppresses charges in Al2O3 films and prevents dopant penetration through the gate dielectric without increasing the leakage current or the interfacial trap density. We also demonstrated the improved performance of a metal-oxide-semiconductor field effect transistor by using a plasma nitrided Al2O3 gate dielectric. These results indicate that plasma nitridation is a promising method for improving the electrical properties of Al2O3 gate dielectrics.

A method is proposed for forming hillock-free aluminum-based alloy bus lines for active-matrix liquid-crystal displays (LCDs). Aluminum (Al)-based alloy films are deposited using an Al target containing boron (B) or nickel (Ni) in a sputtering ambient containing nitrogen. The Al-Ni films deposited using an Al target containing Ni showed excellent hillock resistance: virtually no hillock formation after thermal treatment at around 400 and no significant increase in resistivity. These films also showed good patternability with a simple wet etching: a smooth line edge and a gently tapered profile. These films are thus suitable for the bus lines of active matrices.

A copper(Cu) thick film conductor containing glass and metal oxide for aluminum niride(AlN) substrate was developed. The conductor showed adhesion strength and reliability which were almost comparable to those of Ag-Pd conductors and also had good solder wettability and erosion properties. The Cu conductors must be fired in a nitrogen atmosphere containing oxygen gas. When they were fired under a low oxygen concentration, the gasses thermally decomposed and their properties changed which meant that the molten gasses could not flow smoothly to the AlN surface, so adhesion strength decreased. On the other hand, under high oxygen concentration, the adhesion strength increased because the thermal decomposition and property changes were suppressed. However, poorer solder wettability was brought about because copper was oxidized. Metal oxide added to the conductor could improve the wettability without decreasing the adhesion strength, even if it was fired at the higher oxygen concentration. Suitable metal oxides were CdO, Co3O5 and Fe2O3.

Via electromigration (EM) performance of aluminum based metallization (AL) systems has been investigated for vias chains of 1500-4000 vias of 1.0 micron diameter. The results show that via EM lifetime can not be enhanced by a simple increase of M2 step coverage in AL/AL vias because the EM induced voids are formed at AL/AL via interface where electrons flow from Ml to M2 even in the case of very poor M2 step coverage. The voids are induced by the boundary layer in AL/AL vias, where a temperature gradient causes discontinuity of aluminum atoms flux. The failure location is not moved though via EM lifetime can be improved by controlling stress in passivation, sputter etch removal thickness and grain size of the first metal. Next, the effect of the boundary layer are eliminated by depositing titanium under the second aluminum or depositing WSi on the first aluminum. In the both cases, via EM lifetime are improved and the failure locations are changed. Especially WSi layer suppresses the voids formation rather than titanium. Models for the failure mechanism in each metallization system are further discussed.

New focused ion beam (FIB) methods for microscopic cross-sectioning and observation, microscopic crosssectioning and elemental analysis, and aluminum film microstructure observation are presented. The new methods are compared to the conventional methods and the conventional FIB methods, from the four viewpoints such as easiness of analysis, analysis time, spatial resolution, and pinpointing precision. The new FIB methods, as a result, are shown to be the best ones totally judging from the viewpoints shown above.

Self-aligned aluminum-gate MOSFET's have been successfully fabricated by employing ultraclean ion implantation technology. The use of ultra high vacuum ion implanter and the suppression of high-energy ion-beam-induced metal sputter contamination have enabled us to form ultra-shallow low-leakage pn junctions by furnace annealing at a temperature as low as 450. The fabricated aluminum-gate MOSFET's have exhibited good electrical characteristics, thus demonstrating a large potential for application to realizing ultra-high-speed integrated circuits.

A new direct projection patterning technique of aluminum using synchrotron radiation (SR) is proposed. It is based on the thermal reaction control effect of SR excitation. In the case of the Si surface, pure thermal growth is possible at 200, however, this growth is suppressed perfectly by SR irradiation. On the other hand, Al growth on the SiO2 surface is impossible at the same temperature thermally, however, SR has an effect to initiate thermal reaction. Both new effects of SR, suppression and initiation, are clarified to be caused by atomic order level thin layers formed from CVD gases by SR excitation on the surfaces. By using these effects, the direct inverse and normal projection patterning of Al are successfully demonstrated.

The mechanism of UV-excited dry cleaning using photoexcited chlorine radicals has been investigated for removing iron and aluminum contamination on a silicon surface. The iron and aluminum contaminants with a surface concentration of 1013 atoms/cm2 were intentionally introduced via an ammonium-hydrogenperoxide solution. The silicon etching rates from the Uv-excited dry cleaning differ depending on the contaminants. Fe and Al can be removed in the same manner. The removal of Fe and Al is highly temperature dependent, and is little affected by the silicon etching depth. Both Fe and Al on the silicon surface were completely removed by UV-excited dry cleaning at a cleaning temperature of 170, and were decreased by two orders of magnitude from the initial level when the surface was etched only 2 nm deep.