The search functionality is under construction.
The search functionality is under construction.

Author Search Result

[Author] Rinshi SUGINO(2hit)

1-2hit
  • Electrical Characteristics of Silicon Devices after UV-Excited Dry Cleaning

    Yasuhisa SATO  Rinshi SUGINO  Masaki OKUNO  Toshiro NAKANISHI  Takashi ITO  

     
    PAPER-Opto-Electronics Technology for LSIs

      Vol:
    E76-C No:1
      Page(s):
    41-46

    Breakdown fields and the charges to breakdown (QBD) of oxides increased after UV/Cl2 pre-oxidation cleaning. This is due to decreased residual metal contaminants on silicon surfaces in the bottom of the LOCOS region after wet cleaning. Treatment in NH4OH, H2O2 and H2O prior to UV/Cl2 cleaning suppressed increases in surface roughness and kept leakage currents through the oxides after UV/Cl2 cleaning as low as those after wet cleaning alone. The large junction leakage currents--caused by metal contaminants introduced during dry etching--decreased after UV/Cl2 cleaning which removes the contaminated layer.

  • Removal of Fe and Al on a Silicon Surface Using UV-Excited Dry Cleaning

    Rinshi SUGINO  Yoshiko OKUI  Masaki OKUNO  Mayumi SHIGENO  Yasuhisa SATO  Akira OHSAWA  Takashi ITO  

     
    PAPER

      Vol:
    E75-C No:7
      Page(s):
    829-833

    The mechanism of UV-excited dry cleaning using photoexcited chlorine radicals has been investigated for removing iron and aluminum contamination on a silicon surface. The iron and aluminum contaminants with a surface concentration of 1013 atoms/cm2 were intentionally introduced via an ammonium-hydrogenperoxide solution. The silicon etching rates from the Uv-excited dry cleaning differ depending on the contaminants. Fe and Al can be removed in the same manner. The removal of Fe and Al is highly temperature dependent, and is little affected by the silicon etching depth. Both Fe and Al on the silicon surface were completely removed by UV-excited dry cleaning at a cleaning temperature of 170, and were decreased by two orders of magnitude from the initial level when the surface was etched only 2 nm deep.