Electrical Characteristics of Silicon Devices after UV-Excited Dry Cleaning
Summary :
Breakdown fields and the charges to breakdown (QBD) of oxides increased after UV/Cl2 pre-oxidation cleaning. This is due to decreased residual metal contaminants on silicon surfaces in the bottom of the LOCOS region after wet cleaning. Treatment in NH4OH, H2O2 and H2O prior to UV/Cl2 cleaning suppressed increases in surface roughness and kept leakage currents through the oxides after UV/Cl2 cleaning as low as those after wet cleaning alone. The large junction leakage currents--caused by metal contaminants introduced during dry etching--decreased after UV/Cl2 cleaning which removes the contaminated layer.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E76-C No.1 pp.41-46
- Publication Date
- 1993/01/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on Opto-Electronics and LSI)
- Category
- Opto-Electronics Technology for LSIs
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Yasuhisa SATO, Rinshi SUGINO, Masaki OKUNO, Toshiro NAKANISHI, Takashi ITO, "Electrical Characteristics of Silicon Devices after UV-Excited Dry Cleaning" in IEICE TRANSACTIONS on Electronics,
vol. E76-C, no. 1, pp. 41-46, January 1993, doi: .
Abstract: Breakdown fields and the charges to breakdown (QBD) of oxides increased after UV/Cl2 pre-oxidation cleaning. This is due to decreased residual metal contaminants on silicon surfaces in the bottom of the LOCOS region after wet cleaning. Treatment in NH4OH, H2O2 and H2O prior to UV/Cl2 cleaning suppressed increases in surface roughness and kept leakage currents through the oxides after UV/Cl2 cleaning as low as those after wet cleaning alone. The large junction leakage currents--caused by metal contaminants introduced during dry etching--decreased after UV/Cl2 cleaning which removes the contaminated layer.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e76-c_1_41/_p
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@ARTICLE{e76-c_1_41,
author={Yasuhisa SATO, Rinshi SUGINO, Masaki OKUNO, Toshiro NAKANISHI, Takashi ITO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Electrical Characteristics of Silicon Devices after UV-Excited Dry Cleaning},
year={1993},
volume={E76-C},
number={1},
pages={41-46},
abstract={Breakdown fields and the charges to breakdown (QBD) of oxides increased after UV/Cl2 pre-oxidation cleaning. This is due to decreased residual metal contaminants on silicon surfaces in the bottom of the LOCOS region after wet cleaning. Treatment in NH4OH, H2O2 and H2O prior to UV/Cl2 cleaning suppressed increases in surface roughness and kept leakage currents through the oxides after UV/Cl2 cleaning as low as those after wet cleaning alone. The large junction leakage currents--caused by metal contaminants introduced during dry etching--decreased after UV/Cl2 cleaning which removes the contaminated layer.},
keywords={},
doi={},
ISSN={},
month={January},}
Copy
TY - JOUR
TI - Electrical Characteristics of Silicon Devices after UV-Excited Dry Cleaning
T2 - IEICE TRANSACTIONS on Electronics
SP - 41
EP - 46
AU - Yasuhisa SATO
AU - Rinshi SUGINO
AU - Masaki OKUNO
AU - Toshiro NAKANISHI
AU - Takashi ITO
PY - 1993
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E76-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 1993
AB - Breakdown fields and the charges to breakdown (QBD) of oxides increased after UV/Cl2 pre-oxidation cleaning. This is due to decreased residual metal contaminants on silicon surfaces in the bottom of the LOCOS region after wet cleaning. Treatment in NH4OH, H2O2 and H2O prior to UV/Cl2 cleaning suppressed increases in surface roughness and kept leakage currents through the oxides after UV/Cl2 cleaning as low as those after wet cleaning alone. The large junction leakage currents--caused by metal contaminants introduced during dry etching--decreased after UV/Cl2 cleaning which removes the contaminated layer.
ER -
English
