Removal of Fe and Al on a Silicon Surface Using UV-Excited Dry Cleaning

Rinshi SUGINO; Yoshiko OKUI; Masaki OKUNO; Mayumi SHIGENO; Yasuhisa SATO; Akira OHSAWA; Takashi ITO

Removal of Fe and Al on a Silicon Surface Using UV-Excited Dry Cleaning

Rinshi SUGINO, Yoshiko OKUI, Masaki OKUNO, Mayumi SHIGENO, Yasuhisa SATO, Akira OHSAWA, Takashi ITO

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The mechanism of UV-excited dry cleaning using photoexcited chlorine radicals has been investigated for removing iron and aluminum contamination on a silicon surface. The iron and aluminum contaminants with a surface concentration of 10¹³ atoms/cm² were intentionally introduced via an ammonium-hydrogenperoxide solution. The silicon etching rates from the Uv-excited dry cleaning differ depending on the contaminants. Fe and Al can be removed in the same manner. The removal of Fe and Al is highly temperature dependent, and is little affected by the silicon etching depth. Both Fe and Al on the silicon surface were completely removed by UV-excited dry cleaning at a cleaning temperature of 170, and were decreased by two orders of magnitude from the initial level when the surface was etched only 2 nm deep.

Publication: IEICE TRANSACTIONS on Electronics Vol.E75-C No.7 pp.829-833

Publication Date: 1992/07/25

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Type of Manuscript: Special Section PAPER (Special Issue on Ultra Clean Technology)

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Rinshi SUGINO, Yoshiko OKUI, Masaki OKUNO, Mayumi SHIGENO, Yasuhisa SATO, Akira OHSAWA, Takashi ITO, "Removal of Fe and Al on a Silicon Surface Using UV-Excited Dry Cleaning" in IEICE TRANSACTIONS on Electronics, vol. E75-C, no. 7, pp. 829-833, July 1992, doi: .
Abstract: The mechanism of UV-excited dry cleaning using photoexcited chlorine radicals has been investigated for removing iron and aluminum contamination on a silicon surface. The iron and aluminum contaminants with a surface concentration of 10¹³ atoms/cm² were intentionally introduced via an ammonium-hydrogenperoxide solution. The silicon etching rates from the Uv-excited dry cleaning differ depending on the contaminants. Fe and Al can be removed in the same manner. The removal of Fe and Al is highly temperature dependent, and is little affected by the silicon etching depth. Both Fe and Al on the silicon surface were completely removed by UV-excited dry cleaning at a cleaning temperature of 170, and were decreased by two orders of magnitude from the initial level when the surface was etched only 2 nm deep.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_7_829/_p

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@ARTICLE{e75-c_7_829,
author={Rinshi SUGINO, Yoshiko OKUI, Masaki OKUNO, Mayumi SHIGENO, Yasuhisa SATO, Akira OHSAWA, Takashi ITO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Removal of Fe and Al on a Silicon Surface Using UV-Excited Dry Cleaning},
year={1992},
volume={E75-C},
number={7},
pages={829-833},
abstract={The mechanism of UV-excited dry cleaning using photoexcited chlorine radicals has been investigated for removing iron and aluminum contamination on a silicon surface. The iron and aluminum contaminants with a surface concentration of 10¹³ atoms/cm² were intentionally introduced via an ammonium-hydrogenperoxide solution. The silicon etching rates from the Uv-excited dry cleaning differ depending on the contaminants. Fe and Al can be removed in the same manner. The removal of Fe and Al is highly temperature dependent, and is little affected by the silicon etching depth. Both Fe and Al on the silicon surface were completely removed by UV-excited dry cleaning at a cleaning temperature of 170, and were decreased by two orders of magnitude from the initial level when the surface was etched only 2 nm deep.},
keywords={},
doi={},
ISSN={},
month={July},}

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TY - JOUR
TI - Removal of Fe and Al on a Silicon Surface Using UV-Excited Dry Cleaning
T2 - IEICE TRANSACTIONS on Electronics
SP - 829
EP - 833
AU - Rinshi SUGINO
AU - Yoshiko OKUI
AU - Masaki OKUNO
AU - Mayumi SHIGENO
AU - Yasuhisa SATO
AU - Akira OHSAWA
AU - Takashi ITO
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 1992
AB - The mechanism of UV-excited dry cleaning using photoexcited chlorine radicals has been investigated for removing iron and aluminum contamination on a silicon surface. The iron and aluminum contaminants with a surface concentration of 10¹³ atoms/cm² were intentionally introduced via an ammonium-hydrogenperoxide solution. The silicon etching rates from the Uv-excited dry cleaning differ depending on the contaminants. Fe and Al can be removed in the same manner. The removal of Fe and Al is highly temperature dependent, and is little affected by the silicon etching depth. Both Fe and Al on the silicon surface were completely removed by UV-excited dry cleaning at a cleaning temperature of 170, and were decreased by two orders of magnitude from the initial level when the surface was etched only 2 nm deep.
ER -