Self-Aligned Aluminum-Gate MOSFET's Having Ultra-Shallow Junctions Formed by 450<cd0216e.gif> Furnace Annealing

Koji KOTANI; Tadahiro OHMI; Satoshi SHIMONISHI; Tomohiro MIGITA; Hideki KOMORI; Tadashi SHIBATA

Self-Aligned Aluminum-Gate MOSFET's Having Ultra-Shallow Junctions Formed by 450 Furnace Annealing

Koji KOTANI, Tadahiro OHMI, Satoshi SHIMONISHI, Tomohiro MIGITA, Hideki KOMORI, Tadashi SHIBATA

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Self-aligned aluminum-gate MOSFET's have been successfully fabricated by employing ultraclean ion implantation technology. The use of ultra high vacuum ion implanter and the suppression of high-energy ion-beam-induced metal sputter contamination have enabled us to form ultra-shallow low-leakage pn junctions by furnace annealing at a temperature as low as 450. The fabricated aluminum-gate MOSFET's have exhibited good electrical characteristics, thus demonstrating a large potential for application to realizing ultra-high-speed integrated circuits.

Publication: IEICE TRANSACTIONS on Electronics Vol.E76-C No.4 pp.541-547

Publication Date: 1993/04/25

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Type of Manuscript: Special Section PAPER (Special Issue on Sub-Half Micron Si Device and Process Technologies)

Category: Device Technology

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Koji KOTANI, Tadahiro OHMI, Satoshi SHIMONISHI, Tomohiro MIGITA, Hideki KOMORI, Tadashi SHIBATA, "Self-Aligned Aluminum-Gate MOSFET's Having Ultra-Shallow Junctions Formed by 450 Furnace Annealing" in IEICE TRANSACTIONS on Electronics, vol. E76-C, no. 4, pp. 541-547, April 1993, doi: .
Abstract: Self-aligned aluminum-gate MOSFET's have been successfully fabricated by employing ultraclean ion implantation technology. The use of ultra high vacuum ion implanter and the suppression of high-energy ion-beam-induced metal sputter contamination have enabled us to form ultra-shallow low-leakage pn junctions by furnace annealing at a temperature as low as 450. The fabricated aluminum-gate MOSFET's have exhibited good electrical characteristics, thus demonstrating a large potential for application to realizing ultra-high-speed integrated circuits.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e76-c_4_541/_p

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@ARTICLE{e76-c_4_541,
author={Koji KOTANI, Tadahiro OHMI, Satoshi SHIMONISHI, Tomohiro MIGITA, Hideki KOMORI, Tadashi SHIBATA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Self-Aligned Aluminum-Gate MOSFET's Having Ultra-Shallow Junctions Formed by 450 Furnace Annealing},
year={1993},
volume={E76-C},
number={4},
pages={541-547},
abstract={Self-aligned aluminum-gate MOSFET's have been successfully fabricated by employing ultraclean ion implantation technology. The use of ultra high vacuum ion implanter and the suppression of high-energy ion-beam-induced metal sputter contamination have enabled us to form ultra-shallow low-leakage pn junctions by furnace annealing at a temperature as low as 450. The fabricated aluminum-gate MOSFET's have exhibited good electrical characteristics, thus demonstrating a large potential for application to realizing ultra-high-speed integrated circuits.},
keywords={},
doi={},
ISSN={},
month={April},}

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TY - JOUR
TI - Self-Aligned Aluminum-Gate MOSFET's Having Ultra-Shallow Junctions Formed by 450 Furnace Annealing
T2 - IEICE TRANSACTIONS on Electronics
SP - 541
EP - 547
AU - Koji KOTANI
AU - Tadahiro OHMI
AU - Satoshi SHIMONISHI
AU - Tomohiro MIGITA
AU - Hideki KOMORI
AU - Tadashi SHIBATA
PY - 1993
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E76-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 1993
AB - Self-aligned aluminum-gate MOSFET's have been successfully fabricated by employing ultraclean ion implantation technology. The use of ultra high vacuum ion implanter and the suppression of high-energy ion-beam-induced metal sputter contamination have enabled us to form ultra-shallow low-leakage pn junctions by furnace annealing at a temperature as low as 450. The fabricated aluminum-gate MOSFET's have exhibited good electrical characteristics, thus demonstrating a large potential for application to realizing ultra-high-speed integrated circuits.
ER -