This paper proposes a new configuration of the Doherty amplifier by introducing digital signal processing that realizes a high efficiency over a wide range of output power. The configuration includes two branches; one branch has a class AB amplifier as the carrier amplifier and the other has two class B amplifiers in cascade as the peak amplifier. Each branch is directly controlled by the digital signal processing unit. The unit controls input power allocation to each branch by a method derived from equations characterizing the carrier and the peak constituent amplifiers. The method includes the compensation of the amplifier for degradation due to nonlinearities. The output power of each constituent amplifier is adjusted by drain DC biases. Calculated characteristics agree well with those obtained by the measurement of a fabricated proposed amplifier, whose efficiency is higher than that of the conventional class AB power amplifiers. Furthermore, a simulation for the OFDM signal specified by the radio LAN shows that the amplifier has sufficient linearity, and that the efficiency exceeds 20% at the output of 20 dBm.

We report on the formation technique and the first observation of visible light emission from silicon nanoparticles (<10nm) embedded in CaF22 Iayers grown on Si(111) substrates by using codeposition of Si and CaF2. It is shown that the size and density of silicon particles embedded in the CaF2 layer can be controlled by varying the substrate temperature and the evaporation rates of CaF2 and Si. The photoluminescence (PL) spectra of Si nanoparticles embedded in CaF2 thin films were investigated. The blue or green light emissions obtained using a He-Cd laser (λ=325nm) could be seen with the naked eye even at room temperature for the first time. It is shown that the PL intensity strongly depends on growth conditions such as the Si:CaF2 flux ratio and the growth temperature. The PL spectra were also changed by in situ annealing process. These phenomena can be explained qualitatively by the quantum size effect of Si nanoparticles embedded in CaF2 barriers.

In this paper, we propose a simple and accurate transfer function model of the power amplifiers for mobile communications. Detail analysis yields a generalized model for AM/AM characteristics in classes AB, B, and C. The analysis includes the effect of drain current variation with input level variation. This model introduces a loadline variation ratio to indicate the change of drain current and to represent the operation classes in a small signal region. Further discussion leads to simplified approximate equations for the AM/AM characteristics, and the estimation procedures for the simplified model parameters. Using the derived procedures, an efficient power amplifier employing pseudomorphic high electron mobility transistor (PHEMT) is fabricated for the 2 GHz band. Finally, the various characteristics given by the model, simulator and measurements are compared and found to agree well in the range of 20 dB below the saturated output level. The model is very effective for characterizing the power amplifiers that are used in linear compensation techniques such as predistortion methods, due to its severe nonlinearity of AM/AM and AM/PM characteristics.