Visible Light Emission from Nanocrystalline Silicon Embedded in CaF2 Layers on Si(111)
Summary :
We report on the formation technique and the first observation of visible light emission from silicon nanoparticles (<10nm) embedded in CaF22 Iayers grown on Si(111) substrates by using codeposition of Si and CaF2. It is shown that the size and density of silicon particles embedded in the CaF2 layer can be controlled by varying the substrate temperature and the evaporation rates of CaF2 and Si. The photoluminescence (PL) spectra of Si nanoparticles embedded in CaF2 thin films were investigated. The blue or green light emissions obtained using a He-Cd laser (λ=325nm) could be seen with the naked eye even at room temperature for the first time. It is shown that the PL intensity strongly depends on growth conditions such as the Si:CaF2 flux ratio and the growth temperature. The PL spectra were also changed by in situ annealing process. These phenomena can be explained qualitatively by the quantum size effect of Si nanoparticles embedded in CaF2 barriers.
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- IEICE TRANSACTIONS on Electronics Vol.E79-C No.11 pp.1562-1567
- Publication Date
- 1996/11/25
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- Special Section PAPER (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
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Masahiro WATANABE, Fumitaka IIZUKA, Masahiro ASADA, "Visible Light Emission from Nanocrystalline Silicon Embedded in CaF2 Layers on Si(111)" in IEICE TRANSACTIONS on Electronics,
vol. E79-C, no. 11, pp. 1562-1567, November 1996, doi: .
Abstract: We report on the formation technique and the first observation of visible light emission from silicon nanoparticles (<10nm) embedded in CaF22 Iayers grown on Si(111) substrates by using codeposition of Si and CaF2. It is shown that the size and density of silicon particles embedded in the CaF2 layer can be controlled by varying the substrate temperature and the evaporation rates of CaF2 and Si. The photoluminescence (PL) spectra of Si nanoparticles embedded in CaF2 thin films were investigated. The blue or green light emissions obtained using a He-Cd laser (λ=325nm) could be seen with the naked eye even at room temperature for the first time. It is shown that the PL intensity strongly depends on growth conditions such as the Si:CaF2 flux ratio and the growth temperature. The PL spectra were also changed by in situ annealing process. These phenomena can be explained qualitatively by the quantum size effect of Si nanoparticles embedded in CaF2 barriers.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e79-c_11_1562/_p
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@ARTICLE{e79-c_11_1562,
author={Masahiro WATANABE, Fumitaka IIZUKA, Masahiro ASADA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Visible Light Emission from Nanocrystalline Silicon Embedded in CaF2 Layers on Si(111)},
year={1996},
volume={E79-C},
number={11},
pages={1562-1567},
abstract={We report on the formation technique and the first observation of visible light emission from silicon nanoparticles (<10nm) embedded in CaF22 Iayers grown on Si(111) substrates by using codeposition of Si and CaF2. It is shown that the size and density of silicon particles embedded in the CaF2 layer can be controlled by varying the substrate temperature and the evaporation rates of CaF2 and Si. The photoluminescence (PL) spectra of Si nanoparticles embedded in CaF2 thin films were investigated. The blue or green light emissions obtained using a He-Cd laser (λ=325nm) could be seen with the naked eye even at room temperature for the first time. It is shown that the PL intensity strongly depends on growth conditions such as the Si:CaF2 flux ratio and the growth temperature. The PL spectra were also changed by in situ annealing process. These phenomena can be explained qualitatively by the quantum size effect of Si nanoparticles embedded in CaF2 barriers.},
keywords={},
doi={},
ISSN={},
month={November},}
Copy
TY - JOUR
TI - Visible Light Emission from Nanocrystalline Silicon Embedded in CaF2 Layers on Si(111)
T2 - IEICE TRANSACTIONS on Electronics
SP - 1562
EP - 1567
AU - Masahiro WATANABE
AU - Fumitaka IIZUKA
AU - Masahiro ASADA
PY - 1996
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E79-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 1996
AB - We report on the formation technique and the first observation of visible light emission from silicon nanoparticles (<10nm) embedded in CaF22 Iayers grown on Si(111) substrates by using codeposition of Si and CaF2. It is shown that the size and density of silicon particles embedded in the CaF2 layer can be controlled by varying the substrate temperature and the evaporation rates of CaF2 and Si. The photoluminescence (PL) spectra of Si nanoparticles embedded in CaF2 thin films were investigated. The blue or green light emissions obtained using a He-Cd laser (λ=325nm) could be seen with the naked eye even at room temperature for the first time. It is shown that the PL intensity strongly depends on growth conditions such as the Si:CaF2 flux ratio and the growth temperature. The PL spectra were also changed by in situ annealing process. These phenomena can be explained qualitatively by the quantum size effect of Si nanoparticles embedded in CaF2 barriers.
ER -
English
