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[Author] Gensai TEI(2hit)

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  • Design, Fabrication, and Evaluation of Waveguide Structure Using Si/CaF2 Heterostructure for Near- and Mid- Infrared Silicon Photonics

    Long LIU  Gensai TEI  Masahiro WATANABE  

     
    PAPER-Lasers, Quantum Electronics

      Pubricized:
    2022/07/08
      Vol:
    E106-C No:1
      Page(s):
    1-6

    We have proposed integrated waveguide structure suitable for mid- and near- infrared light propagation using Si and CaF2 heterostructures on Si substrate. Using a fabrication process based on etching, lithography and crystal growth techniques, we have formed a slab-waveguide structure with a current injection mechanism on a SOI substrate, which would be a key component for Si/CaF2 quantum cascade lasers and other optical integrated systems. The propagation of light at a wavelength of 1.55 µm through a Si/CaF2 waveguide structure have been demonstrated for the first time using a structure with a Si/CaF2 multilayered core with 610-nm-thick, waveguide width of 970 nm, which satisfies single-mode condition in the horizontal direction within a tolerance of fabrication accuracy. The waveguide loss for transverse magnetic (TM) mode has been evaluated to be 51.4 cm-1. The cause of the loss was discussed by estimating the edge roughness scattering and free carrier absorption, which suggests further reduction of the loss would be possible.

  • Design and Analysis of Si/CaF2 Near-Infrared (λ∼1.7µm) DFB Quantum Cascade Laser for Silicon Photonics

    Gensai TEI  Long LIU  Masahiro WATANABE  

     
    PAPER-Lasers, Quantum Electronics

      Pubricized:
    2022/11/04
      Vol:
    E106-C No:5
      Page(s):
    157-164

    We have designed a near-infrared wavelength Si/CaF2 DFB quantum cascade laser and investigated the possibility of single-mode laser oscillation by analysis of the propagation mode, gain, scattering time of Si quantum well, and threshold current density. As the waveguide and resonator, a slab-type waveguide structure with a Si/CaF2 active layer sandwiched by SiO2 on a Si (111) substrate and a grating structure in an n-Si conducting layer were assumed. From the results of optical propagation mode analysis, by assuming a λ/4-shifted bragg waveguide structure, it was found that the single vertical and horizontal TM mode propagation is possible at the designed wavelength of 1.70µm. In addition, a design of the active layer is proposed and its current injection capability is roughly estimated to be 25.1kA/cm2, which is larger than required threshold current density of 1.4kA/cm2 calculated by combining analysis results of the scattering time, population inversion, gain of quantum cascade lasers, and coupling theory of a Bragg waveguide. The results strongly indicate the possibility of single-mode laser oscillation.