Design and Analysis of Si/CaF2 Near-Infrared (λ∼1.7µm) DFB Quantum Cascade Laser for Silicon Photonics
Summary :
We have designed a near-infrared wavelength Si/CaF2 DFB quantum cascade laser and investigated the possibility of single-mode laser oscillation by analysis of the propagation mode, gain, scattering time of Si quantum well, and threshold current density. As the waveguide and resonator, a slab-type waveguide structure with a Si/CaF2 active layer sandwiched by SiO2 on a Si (111) substrate and a grating structure in an n-Si conducting layer were assumed. From the results of optical propagation mode analysis, by assuming a λ/4-shifted bragg waveguide structure, it was found that the single vertical and horizontal TM mode propagation is possible at the designed wavelength of 1.70µm. In addition, a design of the active layer is proposed and its current injection capability is roughly estimated to be 25.1kA/cm2, which is larger than required threshold current density of 1.4kA/cm2 calculated by combining analysis results of the scattering time, population inversion, gain of quantum cascade lasers, and coupling theory of a Bragg waveguide. The results strongly indicate the possibility of single-mode laser oscillation.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E106-C No.5 pp.157-164
- Publication Date
- 2023/05/01
- Publicized
- 2022/11/04
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.2022ECP5045
- Type of Manuscript
- PAPER
- Category
- Lasers, Quantum Electronics
Authors
Gensai TEI
Tokyo Institute of Technology
Long LIU
Tokyo Institute of Technology
Masahiro WATANABE
Tokyo Institute of Technology
Keyword
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Gensai TEI, Long LIU, Masahiro WATANABE, "Design and Analysis of Si/CaF2 Near-Infrared (λ∼1.7µm) DFB Quantum Cascade Laser for Silicon Photonics" in IEICE TRANSACTIONS on Electronics,
vol. E106-C, no. 5, pp. 157-164, May 2023, doi: 10.1587/transele.2022ECP5045.
Abstract: We have designed a near-infrared wavelength Si/CaF2 DFB quantum cascade laser and investigated the possibility of single-mode laser oscillation by analysis of the propagation mode, gain, scattering time of Si quantum well, and threshold current density. As the waveguide and resonator, a slab-type waveguide structure with a Si/CaF2 active layer sandwiched by SiO2 on a Si (111) substrate and a grating structure in an n-Si conducting layer were assumed. From the results of optical propagation mode analysis, by assuming a λ/4-shifted bragg waveguide structure, it was found that the single vertical and horizontal TM mode propagation is possible at the designed wavelength of 1.70µm. In addition, a design of the active layer is proposed and its current injection capability is roughly estimated to be 25.1kA/cm2, which is larger than required threshold current density of 1.4kA/cm2 calculated by combining analysis results of the scattering time, population inversion, gain of quantum cascade lasers, and coupling theory of a Bragg waveguide. The results strongly indicate the possibility of single-mode laser oscillation.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2022ECP5045/_p
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@ARTICLE{e106-c_5_157,
author={Gensai TEI, Long LIU, Masahiro WATANABE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Design and Analysis of Si/CaF2 Near-Infrared (λ∼1.7µm) DFB Quantum Cascade Laser for Silicon Photonics},
year={2023},
volume={E106-C},
number={5},
pages={157-164},
abstract={We have designed a near-infrared wavelength Si/CaF2 DFB quantum cascade laser and investigated the possibility of single-mode laser oscillation by analysis of the propagation mode, gain, scattering time of Si quantum well, and threshold current density. As the waveguide and resonator, a slab-type waveguide structure with a Si/CaF2 active layer sandwiched by SiO2 on a Si (111) substrate and a grating structure in an n-Si conducting layer were assumed. From the results of optical propagation mode analysis, by assuming a λ/4-shifted bragg waveguide structure, it was found that the single vertical and horizontal TM mode propagation is possible at the designed wavelength of 1.70µm. In addition, a design of the active layer is proposed and its current injection capability is roughly estimated to be 25.1kA/cm2, which is larger than required threshold current density of 1.4kA/cm2 calculated by combining analysis results of the scattering time, population inversion, gain of quantum cascade lasers, and coupling theory of a Bragg waveguide. The results strongly indicate the possibility of single-mode laser oscillation.},
keywords={},
doi={10.1587/transele.2022ECP5045},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - Design and Analysis of Si/CaF2 Near-Infrared (λ∼1.7µm) DFB Quantum Cascade Laser for Silicon Photonics
T2 - IEICE TRANSACTIONS on Electronics
SP - 157
EP - 164
AU - Gensai TEI
AU - Long LIU
AU - Masahiro WATANABE
PY - 2023
DO - 10.1587/transele.2022ECP5045
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E106-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2023
AB - We have designed a near-infrared wavelength Si/CaF2 DFB quantum cascade laser and investigated the possibility of single-mode laser oscillation by analysis of the propagation mode, gain, scattering time of Si quantum well, and threshold current density. As the waveguide and resonator, a slab-type waveguide structure with a Si/CaF2 active layer sandwiched by SiO2 on a Si (111) substrate and a grating structure in an n-Si conducting layer were assumed. From the results of optical propagation mode analysis, by assuming a λ/4-shifted bragg waveguide structure, it was found that the single vertical and horizontal TM mode propagation is possible at the designed wavelength of 1.70µm. In addition, a design of the active layer is proposed and its current injection capability is roughly estimated to be 25.1kA/cm2, which is larger than required threshold current density of 1.4kA/cm2 calculated by combining analysis results of the scattering time, population inversion, gain of quantum cascade lasers, and coupling theory of a Bragg waveguide. The results strongly indicate the possibility of single-mode laser oscillation.
ER -
English
