Wavelength-tunable 1.5 µm GaInAsP/InP bundle-integrated-guide distributed Bragg reflector (BIG-DBR) dynamic-single-mode lasers are presented. Tuning is due to free carrier plasma effect generated by the injected tuning current at the monolithically integrated tuning regions. Low threshold current CW operation of 28 mA was obtained in junction-up mounting. Wide-range continuous wavelength tuning more than 9 was demonstrated for the first time.

This paper describes the recent progress made in developing wavelength tunable semiconductor light sources for WDM applications. Wide and quasi-continuous wavelength tunings were investigated for a wavelength-selectable laser and a wavelength tunable distributed Bragg reflector (DBR) laser having a super structure grating (SSG). A wavelength-selectable laser consisting of a DFB laser array, a multi-mode interferometer (MMI), and a semiconductor optical amplifier (SOA) demonstrated a quasi-continuous tuning range of 46.9 nm by using temperature control. A wavelength-tunable DBR laser with SSG exhibited a quasi-continuous tuning range of 62.4 nm by using three tuning current controls. Wavelength stabilization was also demonstrated under the temperature variations of 5.

We studied three types of lasers emitting narrow beam divergence of output light: 1) a spot-size converter integrated laser diodes (SS-LDs) with a vertically tapered waveguide, 2) one with a laterally tapered waveguide, and 3) one consisting of a small cross section of active region. We compared them with regard to their performance in coupling efficiency to a cleaved single mode fiber, threshold current, output power, and reliability. Both the spot-size converted integrated lasers with vertically and laterally tapered waveguide repeatedly provided low threshold currents of as low as 6 mA and low coupling loss to the fiber of 1.2 to 2.5 dB in two inch wafer processes. As a result of the aging test, the SS-lasers were predicted to have the same degradation rate as a conventional buried heterostructure laser. The laser having a small cross section of active layer also has low coupling loss and high efficiency up to 85.