The crosstalk characteristics of a long-wavelength monolithically integrated photoreceiver array are analyzed. The device consists of an array of transimpedance photoreceivers fabricated on a semi-insulating InP substrate. The distance between the photodetectors is large enough to suppress the photonic crosstalk. Therefore, the crosstalk of the device is mainly due to signal propagation from the channels through the power line shared by each channel on the chip. This crosstalk is inevitable to the photoreceiver arrays which employ common power lines. The magnitude of the crosstalk largely depends on the impedance of the power-supply circuit outside the chip. The crosstalk spectrum often has a peak and recess structure. The crosstalk peak at the edge of the operating band-width is due to the resonance characteristic of the transimpedance amplifier. The other peak and recess structures on the spectrum are due to the resonance phenomena of on-chip and off-chip capacitors and inductance on the power-supply line outside the chip. This crosstalk can be reduced by using on-chip bypass capacitance and dumping resistance. However, the resonance due to the capacitance and inductance on the power-supply circuit outside the chip can't be controlled by the on-chip components. Therefore, an optimized design for the power supply circuit outside the chip is also indispensable for suppressing crosstalk.

We studied three types of lasers emitting narrow beam divergence of output light: 1) a spot-size converter integrated laser diodes (SS-LDs) with a vertically tapered waveguide, 2) one with a laterally tapered waveguide, and 3) one consisting of a small cross section of active region. We compared them with regard to their performance in coupling efficiency to a cleaved single mode fiber, threshold current, output power, and reliability. Both the spot-size converted integrated lasers with vertically and laterally tapered waveguide repeatedly provided low threshold currents of as low as 6 mA and low coupling loss to the fiber of 1.2 to 2.5 dB in two inch wafer processes. As a result of the aging test, the SS-lasers were predicted to have the same degradation rate as a conventional buried heterostructure laser. The laser having a small cross section of active layer also has low coupling loss and high efficiency up to 85.

Spontaneous carrier lifetimes in InGaAsP/InP double heterostructure lasers emitting at1.3µm were experimentally determined from lasing delay time measarement. Various step-current superposed on bias current was applied to a laser diode with 20 µm-stripe geometry. The carrier lifetime apparently decreased with increasing bias current from 4-5 ns at non-biased state to2 ns at well biased state. This change in the measured lifetime was explained by considering the effect of junction capacitance. It was shown that the effect was almost removed by the application of bias current of more than1 kAcm-2. µm-1 and then the intrinsic lifetime was obtained. Deduced carrier lifetime well agreed with that estimated from relaxation oscillation measurement.