We propose a novel method of precisely measuring the polarization dependence of single pass gain (PDG) in a semiconductor optical amplifier integrated with spot-size convertors (SS-SOA). By averaging the signal gain of a SS-SOA over a wide wavelength range using the amplified spontaneous emission (ASE) of an erbium doped fiber (EDF), the PDG can be accurately estimated. This is because the influence of gain ripples on the measurement results are drastically reduced. We successfully evaluated the PDG of an angled-facet SS-SOA, even before the process of anti-reflection coating, within a small error of 0.5dB. The EDF-ASE technique is useful in sampling tests and selecting angled-facet SS-SOA chips from wafers. The polarization dependence of the coupling efficiency (PDCE) between a SS-SOA and optical fiber is also evaluated by measuring the photo-current of the active layer for TE and TM input signals. It is possible, therefore, to specify the polarization characteristics of the active region and spot-size converter region, which are indispensable parameters for the design of the SS-SOA.

This paper describes short pulse generation at over 40 GHz using monolithic mode-locked lasers integrated with electroabsorption modulators. The electroabsorption modulator using strained-InGaAsP multiquantum wells provides a pulse shortening gate at a high-repetition frequency. Pulse generation around 4 ps has been realized at a repetition frequency of 43. 5 GHz. Pulse compression using a 1. 3 µm single mode fiber is performed and a 0. 87 ps pulse is obtained.

We present an 88 wavelength-routing switch (WRS) that monolithically integrates tunable wavelength converters (TWCs) and an 88 arrayed-waveguide grating. The TWC consists of a double-ring-resonator tunable laser (DRR TL) allowing rapid and stable switching and a semiconductor-optical-amplifier-based optical gate. Two different types of dry-etched mirrors form the laser cavity of the DRR TL, which enable integration of the optical components of the WRS on a single chip. The monolithic WRS performed 18 high-speed wavelength routing of a non-return-to-zero signal at 10 Gbit/s. The switching operation was demonstrated by simultaneously using two adjacent TWCs.

A new device consisting of an optical pulse generation section and pulse coding section monolithically integrated on a single-chip has been developed. The pulse generation section consists of a multiple quantum well (MQW) electroabsorption modulator integrated with an MQW DFB laser. The modulator operates at large-signal modulation and low voltage (from 2 to 3-V DC bias with a 3.2-V peak-to-peak RF signal). The second modulator is operated independently as a pulse encoder. An approximately transform-limited optical pulse train, whose full width at half maximum (FWHM) in the time domain is less than 17-ps and spectral FWHM is 28-GHz, is obtained with a repetition frequency of 10-GHz. Compressive strain is introduced in both InGaAsP quantum wells in order to obtain efficient device characteristics. These include a low threshold current (18-mA) for the laser, and low driving voltage (30-dB for 3-V swing) and high-speed operation (over 12-GHz for a 3-dB bandwidth) for the modulators. Demonstrations show that this new device generates short optical pulses encoded by a pseudo-random signal at a rate of 10 Gbit/s. This is the first time 10 Gbit/s modulation has been achieved with a multi-section electroabsorption modulator/DFB laser integrated light source. This monolithic device is expected to be applied to optical soliton transmitters.

This paper reports on broad-range wavelength tuning characteristics of DBR lasers which make use of a newly proposed multiple-phase-shift super structure grating (SSG). The reflection characteristics of the SSG reflector are analyzed theoretically. We found that the SSG reflector has periodic sharp reflection peaks each with high reflectivities thus making it a suitable wavelength selective reflector for single-mode lasers. The expected characteristics were evident in multiple-phase-shift SSGs fabricated using a new method which involves multiple-phase-shift insertion. DBR lasers with multiple-phase-shift SSGs were fabricated and their wavelength tuning characteristics were studied. The maximum tuning range is 105 nm in the single longitudinal mode under a CW condition. Dynamic single mode operation was also observed throughout the tuning range.

We studied three types of lasers emitting narrow beam divergence of output light: 1) a spot-size converter integrated laser diodes (SS-LDs) with a vertically tapered waveguide, 2) one with a laterally tapered waveguide, and 3) one consisting of a small cross section of active region. We compared them with regard to their performance in coupling efficiency to a cleaved single mode fiber, threshold current, output power, and reliability. Both the spot-size converted integrated lasers with vertically and laterally tapered waveguide repeatedly provided low threshold currents of as low as 6 mA and low coupling loss to the fiber of 1.2 to 2.5 dB in two inch wafer processes. As a result of the aging test, the SS-lasers were predicted to have the same degradation rate as a conventional buried heterostructure laser. The laser having a small cross section of active layer also has low coupling loss and high efficiency up to 85.