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[Author] Hiromitsu KIMURA(5hit)

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  • TMR-Based Logic-in-Memory Circuit for Low-Power VLSI

    Akira MOCHIZUKI  Hiromitsu KIMURA  Mitsuru IBUKI  Takahiro HANYU  

     
    PAPER

      Vol:
    E88-A No:6
      Page(s):
    1408-1415

    A tunneling magnetoresistive(TMR)-based logic-in- memory circuit, where storage functions are distributed over a logic-circuit plane, is proposed for a low-power VLSI system. Since the TMR device is regarded as a variable resistor with a non-volatile storage capability, any logic functions with external inputs and stored inputs can be performed by using the TMR-based resistor/transistor network. The combination of dynamic current-mode circuitry and a TMR-based logic network makes it possible to perform any switching operations without steady current, which results in power saving. A design example of an SAD unit for MPEG encoding is discussed, and its advantages are demonstrated.

  • Highly Reliable Non-volatile Logic Circuit Technology and Its Application Open Access

    Hiromitsu KIMURA  Zhiyong ZHONG  Yuta MIZUOCHI  Norihiro KINOUCHI  Yoshinobu ICHIDA  Yoshikazu FUJIMORI  

     
    INVITED PAPER

      Vol:
    E97-D No:9
      Page(s):
    2226-2233

    A ferroelectric-based (FE-based) non-volatile logic is proposed for low-power LSI. Standby currents in a logic circuit can be cut off by using FE-based non-volatile flip-flops (NVFFs), and the standby power can be reduced to zero. The FE capacitor is accessed only when the power turns on/off, performance of the NVFF is almost as same as that of the conventional flip-flop (FF) in a logic operation. The use of complementarily stored data in coupled FE capacitors makes it possible to realize wide read voltage margin, which guarantees 10 years retention at 85 degree Celsius under less than 1.5V operation. The low supply voltage and electro-static discharge (ESD) detection technique prevents data destruction caused by illegal access for the FE capacitor during standby state. Applying the proposed circuitry in CPU, the write and read operation for all FE capacitors in 1.6k-bit NVFFs are performed within 7µs and 3µs with access energy of 23.1nJ and 8.1nJ, respectively, using 130nm CMOS with Pb(Zr,Ti)O3(PZT) thin films.

  • A 11.3-µA Physical Activity Monitoring System Using Acceleration and Heart Rate

    Motofumi NAKANISHI  Shintaro IZUMI  Mio TSUKAHARA  Hiroshi KAWAGUCHI  Hiromitsu KIMURA  Kyoji MARUMOTO  Takaaki FUCHIKAMI  Yoshikazu FUJIMORI  Masahiko YOSHIMOTO  

     
    PAPER

      Vol:
    E101-C No:4
      Page(s):
    233-242

    This paper presents an algorithm for a physical activity (PA) classification and metabolic equivalents (METs) monitoring and its System-on-a-Chip (SoC) implementation to realize both power reduction and high estimation accuracy. Long-term PA monitoring is an effective means of preventing lifestyle-related diseases. Low power consumption and long battery life are key features supporting the wider dissemination of the monitoring system. As described herein, an adaptive sampling method is implemented for longer battery life by minimizing the active rate of acceleration without decreasing accuracy. Furthermore, advanced PA classification using both the heart rate and acceleration is introduced. The proposed algorithms are evaluated by experimentation with eight subjects in actual conditions. Evaluation results show that the root mean square error with respect to the result of processing with fixed sampling rate is less than 0.22[METs], and the mean absolute error is less than 0.06[METs]. Furthermore, to minimize the system-level power dissipation, a dedicated SoC is implemented using 130-nm CMOS process with FeRAM. A non-volatile CPU using non-volatile memory and a flip-flop is used to reduce the stand-by power. The proposed algorithm, which is implemented using dedicated hardware, reduces the active rate of the CPU and accelerometer. The current consumption of the SoC is less than 3-µA. And the evaluation system using the test chip achieves 74% system-level power reduction. The total current consumption including that of the accelerometer is 11.3-µA on average.

  • Dynamic-Storage-Based Logic-in-Memory Circuit and Its Application to a Fine-Grain Pipelined System

    Hiromitsu KIMURA  Takahiro HANYU  Michitaka KAMEYAMA  

     
    PAPER-Low-Power Technologies

      Vol:
    E85-C No:2
      Page(s):
    288-296

    A new logic-in-memory circuit is proposed for a fine-grain pipelined VLSI system. Dynamic-storage elements are distributed over a logic-circuit plane. A functional pass gate is a key component, where a linear summation and threshold function are merged compactly using charge-storage and charge-coupling effect with a DRAM-cell-based circuit structure. The use of dynamic logic based on pass-transistor network using functional pass gates makes it possible to realize any logic circuits compactly with small power dissipation. As a typical example, a 54-bit pipelined multiplier is implemented by using the proposed circuit technology. Its power dissipation and chip area are reduced to about 63 percent and 72 percent, respectively, in comparison with those of a corresponding binary CMOS implementation under 0.35-µm CMOS technology.

  • Implementation of a DRAM-Cell-Based Multiple-Valued Logic-in-Memory Circuit

    Hiromitsu KIMURA  Takahiro HANYU  Michitaka KAMEYAMA  

     
    PAPER-Optoelectronics

      Vol:
    E85-C No:10
      Page(s):
    1814-1823

    This paper presents a multiple-valued logic-in-memory circuit with real-time programmability. The basic component, in which a dynamic storage function and a multiple-valued threshold function are merged, is implemented compactly by using charge storage and capacitive coupling with a DRAM-cell-based circuit structure under a 0.8-µm CMOS technology. The pass-transistor network using these basic components makes it possible to realize any multiple-valued-inputs binary-outputs logic circuits compactly. As a typical example, a fully parallel multiple-valued magnitude comparator is also implemented by using the proposed DRAM-cell-based pass-transistor network. Its execution time and power dissipation are reduced to about 11 percent and 29 percent, respectively, in comparison with those of a corresponding binary implementation. A prototype chip is also fabricated to confirm the basic operation of the proposed DRAM-cell-based logic-in-memory circuit.