We developed an electrically driven near-infrared broadband light source based on self-assembled InAs quantum dots (QDs). By combining emissions from four InAs QD ensembles with controlled emission center wavelengths, electro-luminescence (EL) with a Gaussian-like spectral shape and approximately 85-nm bandwidth was obtained. The peak wavelength of the EL was blue-shifted from approximately 1230 to 1200 nm with increased injection current density (J). This was due to the state-filling effect: sequential filling of the discrete QD electron/hole states by supplied carriers from lower (ground state; GS) to higher (excited state; ES) energy states. The EL intensities of the ES and GS emissions exhibited different J dependence, also because of the state-filling effect. The point-spread function (PSF) deduced from the Fourier-transformed EL spectrum exhibited a peak without apparent side lobes. The half width at half maximum of the PSF was 6.5 µm, which corresponds to the estimated axial resolution of the optical coherence tomography (OCT) image obtained with this light source. These results demonstrate the effectiveness of the QD-based device for realizing noise-reduced high-resolution OCT.

We propose a directly controlled emitter-follower circuit with a feedback type level stabilizer for low-voltage, low-power and high-speed bipolar ECL circuits. The emitter-follower circuit employs a current source structure that compensates speed and power for various supply voltage and temperature. The feedback controlled circuit with a small current source stabilizes 'High' level. At a power consumption of 1 mW/gate, the new circuit is 45% faster under the loaded condition (FO1, CL0.5 pF) and has 47% better load driving capability than conventional ECL gates.

A new approach which implements a simple, high-speed phase detector with precharge logic will be presented. The minimum detectable phase difference is 40 psec, which is less than a half of conventional detectors. A current mode ring oscillator with a complementary-input bias generator has also been developed to enhance the dynamic range of the VCO under a low supply voltage. A fully CMOS PLL was designed using 0.5-µm technology. By virtue of this simple, fast detector, the wide operation range of 250 MHz at 1.5 V to 622 MHz at 3.0 V was achieved by simulation.