The gap states of tetratetracontane (C44H90; TTC), which is a model oligomer of polyethylene, was examined by using high-sensitivity UV photoemission spectroscopy (HS-UPS). The high sensitivity enabled us to directly observe the weak gap states distributed in the HOMO-LUMO gap from the valence band top to 3.0 eV below the vacuum level. On the basis of the density-of-states derived from UPS results, the tribocharging nature of polyethylene was discussed in comparison with our previous result for nylon-6,6 film.

A new circuit and a transformer structure is described for a high-input-voltage converter operating at a high switching frequency. The two-MOSFET forward converter is suitable for a high-input-voltage converter. To increase the switching frequency, the reset period of the transformer core flux must be reduced. There are a few methods for decreasing the reset period. Increasing the transformer flyback voltage and reducing its stray capacitance are effective in decreasing the reset period without increasing power loss. A new two-MOSFET forward converter is proposed which uset the increased flyback voltage and a transformer structure to reduce the stray capacitance. The new converter using this transformer provides the basis for a 48-V, 100-W output, 270-V input converter operating at 200kHz with high efficiency (above 95%).

In order to examine the validity of Mott-Schottky model at organic/metal interfaces, the position of the vacuum level of N,N'-bis(3-methylphenyl)-N,N'-diphenyl -[1,1'-biphenyl]-4,4'-diamine (TPD) film formed on various metal substrates (Au, Cu, Ag, Mg and Ca) was measured as a function of the film-thickness by Kelvin probe method in ultrahigh vacuum (UHV). TPD is a typical hole-injecting material for organic electroluminescent devices. At all the interfaces, sharp shifts of the vacuum level were observed within 1 nm thickness. Further deposition of TPD up to 100 nm did not change the position of the vacuum level indicating no band bending at these interfaces. These findings clearly demonstrate the Fermi level alignment between metal and bulk TPD solid is not established within typical thickness of real devices.

On surfaces of tris-(8-hydroxyquinolate) aluminum (Alq) and tris(7-propyl-8-hydroxyquinolinato) aluminum (Al7p) thin-films, positive and negative polarization charges appear, respectively, owing to spontaneous orientation of these polar molecules. Alq is a typical electron transport material where electrons are injected from cathode. Because the polarization charge exists at the Alq/cathode interface, it is likely that it affects the electron injection process because of Coulomb interaction. In order to evaluate an impact of polarization charge on electron injection from cathode, electron only devices (EODs) composed of Alq or Al7p were prepared and evaluated by displacement current measurement. We found that Alq-EOD has lower resistance than Al7p-EOD, indicating that the positive polarization charge at Alq/cathode interface enhances the electron injection due to Coulomb attraction, while the electron injection is suppressed by the negative polarization charge at the Al7p/Al interface. These results clearly suggest that it is necessary to design organic semiconductor devices by taking polarization charge into account.

In vacuum-deposited film composed of organic polar molecules, polarization charges appear on the film surface owing to spontaneous orientation of the molecule. Because its density (σpol) determines an amount of accumulation charge (σacc) in organic light-emitting diodes and output power in polar molecular-based vibrational energy generators (VEGs), control of molecular orientation is highly required. Recently, several groups have reported that dipole-dipole interaction between polar molecules induces anti-parallel orientation which does not contribute to σpol. In other words, perturbation inducing the attenuation of the dipole interaction is needed to enhance σpol. In this study, to investigate an effect of light irradiation on σpol, we prepared 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene (TPBi) film under illumination during its deposition, and evaluated the σacc in TPBi-based bilayer device, which equals to σpol. We found that the σacc was increased by light irradiation, indicating that average orientation of TPBi is enhanced. These results suggest that light irradiation during device fabrication is promising process for organic electronic devices including polar molecule-based VEGs.