This paper presents the design of a wideband low noise amplifier (LNA) for the 3GPP LTE (3rd Generation Partnership Project Long Term Evolution) standard. The proposed LNA uses a common gate topology with a noise cancellation technique for wideband (0.7 to 2.7 GHz) and low noise operation. The capacitive cross coupling technique is adopted for the common gate amplifier. Consequently input matching is achieved with lower transconductance, thereby reducing the power consumption and noise contribution. The LNA is designed in a 0.18 µm process and the simulations show lower than -10 dB input return loss (S11), and 2.42.6 dB noise figure (NF) over the entire operating band (0.72.7 GHz) while drawing 9 mA from a 1.8 V supply.

An accurate behavioral model of a DAC-embedded opamp (DAC-opamp) is developed for a yield-ensuring LCD column driver design. A lookup table for the V-I curve of the unit differential pair in the DAC-opamp is extracted from a circuit simulation and is later manipulated through a random error insertion. Virtual ground assumption simplifies the output voltage estimation algorithm. The developed behavioral model of a 5-bit DAC-opamp shows good agreement with the circuit level simulation with less than 5% INL difference.