IEICE TRANSACTIONS on Electronics
A Wideband Noise Cancelling Low Noise Amplifier for 3GPP LTE Standard
Summary :
This paper presents the design of a wideband low noise amplifier (LNA) for the 3GPP LTE (3rd Generation Partnership Project Long Term Evolution) standard. The proposed LNA uses a common gate topology with a noise cancellation technique for wideband (0.7 to 2.7 GHz) and low noise operation. The capacitive cross coupling technique is adopted for the common gate amplifier. Consequently input matching is achieved with lower transconductance, thereby reducing the power consumption and noise contribution. The LNA is designed in a 0.18 µm process and the simulations show lower than -10 dB input return loss (S11), and 2.4
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E94-C No.6 pp.1127-1130
- Publication Date
- 2011/06/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E94.C.1127
- Type of Manuscript
- BRIEF PAPER
- Category
- Microwaves, Millimeter-Waves
Authors
Keyword
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Viet-Hoang LE, Hoai-Nam NGUYEN, Sun-a KIM, Seok-Kyun HAN, Sang-Gug LEE, "A Wideband Noise Cancelling Low Noise Amplifier for 3GPP LTE Standard" in IEICE TRANSACTIONS on Electronics,
vol. E94-C, no. 6, pp. 1127-1130, June 2011, doi: 10.1587/transele.E94.C.1127.
Abstract: This paper presents the design of a wideband low noise amplifier (LNA) for the 3GPP LTE (3rd Generation Partnership Project Long Term Evolution) standard. The proposed LNA uses a common gate topology with a noise cancellation technique for wideband (0.7 to 2.7 GHz) and low noise operation. The capacitive cross coupling technique is adopted for the common gate amplifier. Consequently input matching is achieved with lower transconductance, thereby reducing the power consumption and noise contribution. The LNA is designed in a 0.18 µm process and the simulations show lower than -10 dB input return loss (S11), and 2.4
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E94.C.1127/_p
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@ARTICLE{e94-c_6_1127,
author={Viet-Hoang LE, Hoai-Nam NGUYEN, Sun-a KIM, Seok-Kyun HAN, Sang-Gug LEE, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Wideband Noise Cancelling Low Noise Amplifier for 3GPP LTE Standard},
year={2011},
volume={E94-C},
number={6},
pages={1127-1130},
abstract={This paper presents the design of a wideband low noise amplifier (LNA) for the 3GPP LTE (3rd Generation Partnership Project Long Term Evolution) standard. The proposed LNA uses a common gate topology with a noise cancellation technique for wideband (0.7 to 2.7 GHz) and low noise operation. The capacitive cross coupling technique is adopted for the common gate amplifier. Consequently input matching is achieved with lower transconductance, thereby reducing the power consumption and noise contribution. The LNA is designed in a 0.18 µm process and the simulations show lower than -10 dB input return loss (S11), and 2.4
keywords={},
doi={10.1587/transele.E94.C.1127},
ISSN={1745-1353},
month={June},}
Copy
TY - JOUR
TI - A Wideband Noise Cancelling Low Noise Amplifier for 3GPP LTE Standard
T2 - IEICE TRANSACTIONS on Electronics
SP - 1127
EP - 1130
AU - Viet-Hoang LE
AU - Hoai-Nam NGUYEN
AU - Sun-a KIM
AU - Seok-Kyun HAN
AU - Sang-Gug LEE
PY - 2011
DO - 10.1587/transele.E94.C.1127
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E94-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2011
AB - This paper presents the design of a wideband low noise amplifier (LNA) for the 3GPP LTE (3rd Generation Partnership Project Long Term Evolution) standard. The proposed LNA uses a common gate topology with a noise cancellation technique for wideband (0.7 to 2.7 GHz) and low noise operation. The capacitive cross coupling technique is adopted for the common gate amplifier. Consequently input matching is achieved with lower transconductance, thereby reducing the power consumption and noise contribution. The LNA is designed in a 0.18 µm process and the simulations show lower than -10 dB input return loss (S11), and 2.4
ER -
English
