The effects of fluorine implantation on flicker noise and reliability of NMOSFET and PMOSFETs were concurrently investigated. The flicker noise of an NMOSFET was decreased about 66% by fluorine implantation, and that of a PMOSET was decreased about 76%. As indicated by the results, fluorine implantation is one of the methods that can be used to improve the noise characteristics of MOSFET devices. However, hot-carrier degradation was enhanced by fluorine implantation in NMOSFETs, which can be related to the difference of molecular binding within the gate oxide. On the contrary, in case of PMOSFETs, NBTI life time was increased by fluorine implantation. Therefore, concurrent investigation of hot-carrier and NBTI reliability and flicker noise is necessary in developing MOSFETs for analog/digital mixed signal applications.

In this paper, we suggest a novel pnp BJT structure to improve the matching characteristics of the bipolar junction transistor (BJT) which is fabricated using standard CMOS process. In the case of electrical characteristics, the collector current density Jc of the proposed structure (T2) is a little greater than the conventional structure (T1), which contributes to the greater current gain β of the proposed structure than the conventional structure. Although the matching characteristics of the collector current density of the proposed structure is almost similar to the conventional structure, that of the current gain of the proposed structure is better than the conventional structure about 14.81% due to the better matching characteristics of the base current density of the proposed structure about 59.34%. Therefore, the proposed BJT structure is desirable for high performance analog/digital mixed signal application.