IEICE TRANSACTIONS on Electronics
Novel PNP BJT Structure to Improve Matching Characteristics for Analog and Mixed Signal Integrated Circuit Applications
Summary :
In this paper, we suggest a novel pnp BJT structure to improve the matching characteristics of the bipolar junction transistor (BJT) which is fabricated using standard CMOS process. In the case of electrical characteristics, the collector current density Jc of the proposed structure (T2) is a little greater than the conventional structure (T1), which contributes to the greater current gain β of the proposed structure than the conventional structure. Although the matching characteristics of the collector current density of the proposed structure is almost similar to the conventional structure, that of the current gain of the proposed structure is better than the conventional structure about 14.81% due to the better matching characteristics of the base current density of the proposed structure about 59.34%. Therefore, the proposed BJT structure is desirable for high performance analog/digital mixed signal application.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E96-C No.5 pp.663-668
- Publication Date
- 2013/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E96.C.663
- Type of Manuscript
- Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
- Category
Authors
Seon-Man HWANG
Yi-Jung JUNG
Hyuk-Min KWON
Jae-Hyung JANG
Ho-Young KWAK
Sung-Kyu KWON
Seung-Yong SUNG
Jong-Kwan SHIN
Yi-Sun CHUNG
Da-Soon LEE
Hi-Deok LEE
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Seon-Man HWANG, Yi-Jung JUNG, Hyuk-Min KWON, Jae-Hyung JANG, Ho-Young KWAK, Sung-Kyu KWON, Seung-Yong SUNG, Jong-Kwan SHIN, Yi-Sun CHUNG, Da-Soon LEE, Hi-Deok LEE, "Novel PNP BJT Structure to Improve Matching Characteristics for Analog and Mixed Signal Integrated Circuit Applications" in IEICE TRANSACTIONS on Electronics,
vol. E96-C, no. 5, pp. 663-668, May 2013, doi: 10.1587/transele.E96.C.663.
Abstract: In this paper, we suggest a novel pnp BJT structure to improve the matching characteristics of the bipolar junction transistor (BJT) which is fabricated using standard CMOS process. In the case of electrical characteristics, the collector current density Jc of the proposed structure (T2) is a little greater than the conventional structure (T1), which contributes to the greater current gain β of the proposed structure than the conventional structure. Although the matching characteristics of the collector current density of the proposed structure is almost similar to the conventional structure, that of the current gain of the proposed structure is better than the conventional structure about 14.81% due to the better matching characteristics of the base current density of the proposed structure about 59.34%. Therefore, the proposed BJT structure is desirable for high performance analog/digital mixed signal application.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E96.C.663/_p
Copy
@ARTICLE{e96-c_5_663,
author={Seon-Man HWANG, Yi-Jung JUNG, Hyuk-Min KWON, Jae-Hyung JANG, Ho-Young KWAK, Sung-Kyu KWON, Seung-Yong SUNG, Jong-Kwan SHIN, Yi-Sun CHUNG, Da-Soon LEE, Hi-Deok LEE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Novel PNP BJT Structure to Improve Matching Characteristics for Analog and Mixed Signal Integrated Circuit Applications},
year={2013},
volume={E96-C},
number={5},
pages={663-668},
abstract={In this paper, we suggest a novel pnp BJT structure to improve the matching characteristics of the bipolar junction transistor (BJT) which is fabricated using standard CMOS process. In the case of electrical characteristics, the collector current density Jc of the proposed structure (T2) is a little greater than the conventional structure (T1), which contributes to the greater current gain β of the proposed structure than the conventional structure. Although the matching characteristics of the collector current density of the proposed structure is almost similar to the conventional structure, that of the current gain of the proposed structure is better than the conventional structure about 14.81% due to the better matching characteristics of the base current density of the proposed structure about 59.34%. Therefore, the proposed BJT structure is desirable for high performance analog/digital mixed signal application.},
keywords={},
doi={10.1587/transele.E96.C.663},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - Novel PNP BJT Structure to Improve Matching Characteristics for Analog and Mixed Signal Integrated Circuit Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 663
EP - 668
AU - Seon-Man HWANG
AU - Yi-Jung JUNG
AU - Hyuk-Min KWON
AU - Jae-Hyung JANG
AU - Ho-Young KWAK
AU - Sung-Kyu KWON
AU - Seung-Yong SUNG
AU - Jong-Kwan SHIN
AU - Yi-Sun CHUNG
AU - Da-Soon LEE
AU - Hi-Deok LEE
PY - 2013
DO - 10.1587/transele.E96.C.663
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E96-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2013
AB - In this paper, we suggest a novel pnp BJT structure to improve the matching characteristics of the bipolar junction transistor (BJT) which is fabricated using standard CMOS process. In the case of electrical characteristics, the collector current density Jc of the proposed structure (T2) is a little greater than the conventional structure (T1), which contributes to the greater current gain β of the proposed structure than the conventional structure. Although the matching characteristics of the collector current density of the proposed structure is almost similar to the conventional structure, that of the current gain of the proposed structure is better than the conventional structure about 14.81% due to the better matching characteristics of the base current density of the proposed structure about 59.34%. Therefore, the proposed BJT structure is desirable for high performance analog/digital mixed signal application.
ER -
English
