The performance of recently developed Large Signal (LS) HBT model was evaluated with extensive LS measurements like Power spectrum, Load pull and Inter-modulation investigations. Proposed model has adopted temperature dependent leakage resistance and a simplified capacitance models. The model was implemented in ADS as SDD. Important feature of the model is that the main model parameters are taken directly from measurements in rather simple and understandable way. Results show good accuracy despite the simplicity of the model. To our knowledge the HBT model is one of a few HBT models which can handle high current & Power HBT devices, with significantly less model parameters with good accuracy.

Results of the modeling work on FET, HBT microwave devices is presented. The models are implemented in CAD tools. Experimental characteristics are compared with simulated ones and there is good match between measurements and simulations.

The large signal performance and model for GaN FET devices was evaluated with DC, S-parameters, and large signal measurements. The large signal model was extended with bias and temperature dependence of access resistances, modified capacitance and charge equations, as well as breakdown models. The model was implemented in a commercial CAD tool and exhibits good overall accuracy.