Results of the modeling work on FET, HBT microwave devices is presented. The models are implemented in CAD tools. Experimental characteristics are compared with simulated ones and there is good match between measurements and simulations.
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Copy
Iltcho ANGELOV, "HFET and HBT Modelling for Circuit Analysis" in IEICE TRANSACTIONS on Electronics,
vol. E86-C, no. 10, pp. 1968-1976, October 2003, doi: .
Abstract: Results of the modeling work on FET, HBT microwave devices is presented. The models are implemented in CAD tools. Experimental characteristics are compared with simulated ones and there is good match between measurements and simulations.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e86-c_10_1968/_p
Copy
@ARTICLE{e86-c_10_1968,
author={Iltcho ANGELOV, },
journal={IEICE TRANSACTIONS on Electronics},
title={HFET and HBT Modelling for Circuit Analysis},
year={2003},
volume={E86-C},
number={10},
pages={1968-1976},
abstract={Results of the modeling work on FET, HBT microwave devices is presented. The models are implemented in CAD tools. Experimental characteristics are compared with simulated ones and there is good match between measurements and simulations.},
keywords={},
doi={},
ISSN={},
month={October},}
Copy
TY - JOUR
TI - HFET and HBT Modelling for Circuit Analysis
T2 - IEICE TRANSACTIONS on Electronics
SP - 1968
EP - 1976
AU - Iltcho ANGELOV
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2003
AB - Results of the modeling work on FET, HBT microwave devices is presented. The models are implemented in CAD tools. Experimental characteristics are compared with simulated ones and there is good match between measurements and simulations.
ER -