A new 4B5B block inversion coding is proposed for dc-balanced transmission in high-speed optical parallel links. An 8-bit byte is partitioned into two 4-bit data and converted to two 5-bit blocks by an inversion encoding. The proposed coding greatly reduces circuit complexity with the minimum latency overhead of one clock for the encoder and none for the decoder. The maximum run length is 11.

This letter proposes an output driver which reduces simultaneous switching noise without degradation of rise/fall time. At the start of transition period, the driver optimally uses both VDD and VSS current by switching of on-chip bypass capacitors. The proposed driver achieves 27-percent reduction in peak current with faster transition time.

This paper presents a quantitative analysis and design methodology of resistor-based phase error averaging scheme for precise multiphase generation. Unlike the previously reported works stating that more averaging simply achieves better linearity, the proposed analysis leads to the existence of the optimum number of averaging contributions by including the effect of the signal transition time. The developed model shows a good agreement with a Monte-Carlo circuit simulation. A test PLL with a 32-phase two-dimensional ring VCO, implemented in a 0.18 µm CMOS, generates monotonous 32 phases with the best linearity performance, showing an INL of +0.27/-1.0 LSB and a DNL of +0.37/-0.27 LSB at 1.2 GHz, and an INL of +0.23/-1.57 LSB and a DNL of +0.44/-0.44 LSB at 1.6 GHz.

A digital 3 Gbps 0.2 V differential transmitter is proposed using a voltage-mode pseudo-LVDS output driver. The delay mismatch between two pre-drivers is digitally calibrated by a modified digital DLL with the duty cycle correction. The height and width of eye opening are improved by 103% and 46%, respectively. The power consumption is 11.4 mW at 1.2 V with 0.18 µm process.

A general-purpose multi-Gbps LVDS driver is presented with a new distortion-free level conversion scheme. For high-speed transmission, a dynamic pre-emphasis scheme is also proposed with overdriving current effectively distributed in time. The proposed LVDS driver achieves supply-insensitive duty preservation with a reduction of switching noise by 50-percent.

A high-throughput on-chip monitoring circuit with a digital output is proposed for the variations of the NMOS and PMOS threshold voltages. A voltage-controlled delay line (VCDL) and a time-to-digital converter (TDC) are used to convert a small difference in analog voltage into a large difference in time delay. This circuit was applied to the transistors of W = 10 µm and L = 0.18 µm in a 1616 array matrix fabricated with a 0.18-µm process. The measurement of the threshold voltage shows that the maximum peak-to-peak intra-chip variation of NMOS and PMOS transistors are about 31.7 mV and 32.2 mV, respectively, for the temperature range from -25 to 75. The voltage resolutions of NMOS and PMOS transistors are measured to be 1.10 mV/bit and 3.53 mV/bit at 25, respectively. The 8-bit digital code is generated for the threshold voltage of a transistor in every 125 ns, which corresponds to the 8-MHz throughput.

In this paper, a new transceiver system for the in-vehicle communication system is proposed to enhance data transmission rate and timing accuracy in TDM-based application. The proposed system utilizes point-to-point (P2P) channel, a closed-loop clock forwarding path, and a transceiver with a repeater and clock delay adjuster. The proposed system with 4 ECU (Electronic Computing Unit) nodes is implemented in 180nm CMOS technology and, when compared with conventional bus-based system, achieved more than 125 times faster data transmission. The maximum data rate was 2.5Gbps at 1.8V power supply and the worst peak-to-peak jitter for the data and clock signals over 5000 data symbols were about 49.6ps and 9.8ps respectively.

Two phase detectors (PD) are proposed to minimize the phase offset and deadzone when used in DLL or PLL. With the shortest symmetrical racing paths from both inputs, the binary PD achieves fast latch operation and theoretical elimination of the setup time. In contrast to the conventional PDs whose offsets are around 10 ps with large sensitivity to sizing, the proposed binary PD shows an offset of less than 1 ps with a reduction of 30-percent delay time. The proposed latch-type binary phase detection is also expanded to form a linear PD by the addition of a reset-generating circuit.

This paper proposes a sensing and a precharge circuit schemes suitable for low-voltage and high-speed DRAM design. The proposed offset-compensated direct sensing scheme improves refresh characteristics as well as speed performance. To minimize the number of control switches for the offset compensation, only the output branches of differential amplifiers are implemented in each bit-line pair with a semi-global bias branch, which also reduces 50-percent of bias current. The addition of the direct sensing feature to the offset-compensated pre-sensing dramatically increases the differential current output. For the fast bit-line equalization, a charge-recycled precharge scheme is proposed to reuse VPP discharging current for the generation of a boosted bias without additional charge pumping. The two circuit schemes were verified by the implementation of a 256 Mb SDRAM with a 0.1 µm dual-doped poly-silicon technology.

An 8.8-GS/s 6-bit CMOS analog-to-digital converter (ADC) chip was implemented by time-interleaving eight 1.1-GS/s 6-bit flash ADCs with a 0.18-µm CMOS process. Eight uniformly-spaced 1.1 GHz clocks with 50% duty cycle for the eight flash ADCs were generated by a clock generator, which consists of a phase-locked-loop, digital phase adjusters and digital duty cycle correctors. The input bandwidth of ADC with the ENOB larger than 5.0 bits was measured to be 1.2 GHz. The chip area and power consumption were 2.24 mm2 and 1.6 W, respectively.

A current controlled CMOS output driver was designed by using a temperature-insensitive reference current generator. It eliminates the need for overdesign of the driver transistor size to meet the delay specification at high temperature. Comparison with the conventional CMOS output driver with the same transistor size showed that the ground bounce noise was reduced by 2.5 times and the delay time was increased by 1.4 times, at 25 for 50pF load. The temperature variations of the DC pull-up and pull-down currents of the new output driver were 4% within the temperature range from -15 to 125 compared to the variations of 40 and 60% for pull-up and pull-down respectively for the conventional output driver. The temperature insensitivity of the reference current generator was achieved by multiplying two current components. one which is proportional to mobility and the other which is inversely proportional to mobility, by using a CMOS square root circuit. The temperature variation of the DC output current of the reference current generator alone was 0.77% within the entire temperature range from -15 to 125.

A fully differential folded cascode CMOS OP amp is combined with an adaptive bias OTA to increase the slew rate, and a continuous-time CMFB circuit with a push-pull type combination of a NMOS input and a PMOS input differential amplifiers is used to maximize the output voltage swing. The fabricated OP amp using a 0.8 µm digital CMOS process gives more than three times improvement in slew rate with a 15% increase in DC power consumption and a 7.5% increase in chip area compared to the conventional OP amp fabricated on the same die. The output voltage swing was measured to be -0.75 V -0.7 V at the supply voltage of +/-1.2 V.

This paper proposes a pulse-width modulated (PWM) signaling[1] to send clock and data over a pair of channels for in-vehicle network where a closed chain of point-to-point (P2P) interconnection between electronic control units (ECU) has been established. To improve detection speed and margin of proposed receiver, we also proposed a novel clock and data recovery (CDR) scheme with 0.5 unit-interval (UI) tuning range and a PWM generator utilizing 10 equally-spaced phases. The feasibility of proposed system has been proved by successfully detecting 1.25 Gb/s data delivered via 3 ECUs and inter-channels in 180 nm CMOS technology. Compared to previous study, the proposed system achieved better efficiency in terms of power, cost, and reliability.