A digital 3 Gbps 0.2 V differential transmitter is proposed using a voltage-mode pseudo-LVDS output driver. The delay mismatch between two pre-drivers is digitally calibrated by a modified digital DLL with the duty cycle correction. The height and width of eye opening are improved by 103% and 46%, respectively. The power consumption is 11.4 mW at 1.2 V with 0.18 µm process.

A general-purpose multi-Gbps LVDS driver is presented with a new distortion-free level conversion scheme. For high-speed transmission, a dynamic pre-emphasis scheme is also proposed with overdriving current effectively distributed in time. The proposed LVDS driver achieves supply-insensitive duty preservation with a reduction of switching noise by 50-percent.

An all-digital CMOS duty cycle correction (DCC) circuit with a fixed rising edge was proposed to achieve the wide correction ranges of input duty cycle and PVT variations, the low standby power and the fast recovery from the standby mode for use in multi-phase clock systems. SPICE simulations showed that this DCC adjusts the output duty cycle to 500.7% for the wide range of input duty cycle from 15% to 85% at the input frequency of 1 GHz, within the commercial range of PVT corners. The all-digital implementation and the use of a toggle flip flop at the input stage enabled the wide correction ranges of PVT variations and input duty cycle, respectively.

A fully on-chip open-drain CMOS output driver was designed for high bandwidth DRAMs, such that its output voltage swing was insensitive to the variations of temperature and supply voltage. An auto refresh signal was used to update the contents of the current control register, which determined the transistors to be turned-on among the six binary-weighted transistors of an output driver. Because the auto refresh signal is available in DRAM chips, the output driver of this work does not require any external signals to update the current control register. During the time interval while the update is in progress, a negative feedback loop is formed to maintain the low level output voltage (VOL) to be equal to the reference voltage (VOL.ref) which is generated by a low-voltage bandgap reference circuit. Test results showed the successful operation at the data rate up to 1 Gb/s. The worst-case variations of VOL.ref and VOL of the proposed output driver were measured to be 2.5% and 7.5% respectively within a temperature range of 20 to 90 and a supply voltage range of 2.25 V to 2.75 V, while the worst-case variation of VOL of the conventional output driver was measured to be 24% within the same ranges of temperature and supply voltage.

Two phase detectors (PD) are proposed to minimize the phase offset and deadzone when used in DLL or PLL. With the shortest symmetrical racing paths from both inputs, the binary PD achieves fast latch operation and theoretical elimination of the setup time. In contrast to the conventional PDs whose offsets are around 10 ps with large sensitivity to sizing, the proposed binary PD shows an offset of less than 1 ps with a reduction of 30-percent delay time. The proposed latch-type binary phase detection is also expanded to form a linear PD by the addition of a reset-generating circuit.

The radix-64 encoding scheme was used to reduce the number of partial products in the 5454 CMOS parallel multiplier. The transistor counts, the chip area and the power-delay product were reduced by 28%, 22%, and 17%, respectively, compared to any of the published 5454 CMOS parallel multipliers. A redundant binary (RB) number system was used to represent any of the 65 multiplying coefficients as a RB number which consists of two of 9 fundamental multiplying coefficients and their complements. The resultant RB partial products were added by using optimized RB adders. The total transistor count of the proposed multiplier was 43,579. The chip area in 0.25 µm CMOS process with 5 metal layers was 0.99 mm2. The power consumption and the multiplication time were 111 mW and 6.9 ns, respectively.

An 8-bit 200 MS/s CMOS 2-stage cascaded folding/interpolating ADC chip was implemented by applying a resistor averaging/interpolating scheme at the preamplifier outputs and the differential circuits for the encoder logic block, with a 0.35-µm double-poly CMOS process. The number of preamplifiers was reduced to half by using an averaging technique with a resistor array at the preamplifier outputs. The delay time of digital encoder block was reduced from 2.2 ns to 1.3 ns by replacing the standard CMOS logic with DCVSPG and CPL differential circuits. The measured SFDR was 42.5 dB at the sampling rate of 200 MS/s for the 10.072 MHz sinusoidal input signal.

A half-swing clocking scheme with a complementary gate and source drive is proposed for a CMOS flip-flop to reduce the power consumption of the clock system by 43%, while keeping the flip-flop delay time the same as that of the conventional full-swing clocking scheme. The delay time of the preceding half stage of a flip-flop using this scheme is less than half of that using the previous half-swing clocking scheme.

A fully on-chip current controlled open-drain output driver using a bandgap reference current generator was designed for high bandwidth DRAMs. It reduces the overhead of receiving a digital code from an external source for the compensation of the temperature and supply voltage variations. The correct value of the current control register is updated at the end of every auto refresh cycle. The operation at the data rate up to 0.8 Gb/s was verified by SPICE simulation using a 0.22 µm triple-well CMOS technology.

A 32-bit motor-drive-specific microcontroller chip was newly designed, implemented using a 0.8 µm double-metal CMOS process, and its feasibility was successfully tested by applying the fabricated microcontroller chip to a real AC induction motor drive system. The microcontroller chip includes a single-precision floating-point unit, peripheral devices for motor drive, and a memory controller as well as the SPARC V7 CPU. The pipeline scheme and the two-step multiplication method were used in the multiplier of floating-point unit for the best area and speed trade-off, using the standard cell library available for the design. The chip size is 12.7 12.8 mm2, the number of transistors is around 562,000, and the power consumption is 1.69 W at the supply voltage of 5 V and the clock frequency of 30 MHz. Both a standard cell library and a full-custom layout were used in the implementation.

An 8.8-GS/s 6-bit CMOS analog-to-digital converter (ADC) chip was implemented by time-interleaving eight 1.1-GS/s 6-bit flash ADCs with a 0.18-µm CMOS process. Eight uniformly-spaced 1.1 GHz clocks with 50% duty cycle for the eight flash ADCs were generated by a clock generator, which consists of a phase-locked-loop, digital phase adjusters and digital duty cycle correctors. The input bandwidth of ADC with the ENOB larger than 5.0 bits was measured to be 1.2 GHz. The chip area and power consumption were 2.24 mm2 and 1.6 W, respectively.

A current controlled CMOS output driver was designed by using a temperature-insensitive reference current generator. It eliminates the need for overdesign of the driver transistor size to meet the delay specification at high temperature. Comparison with the conventional CMOS output driver with the same transistor size showed that the ground bounce noise was reduced by 2.5 times and the delay time was increased by 1.4 times, at 25 for 50pF load. The temperature variations of the DC pull-up and pull-down currents of the new output driver were 4% within the temperature range from -15 to 125 compared to the variations of 40 and 60% for pull-up and pull-down respectively for the conventional output driver. The temperature insensitivity of the reference current generator was achieved by multiplying two current components. one which is proportional to mobility and the other which is inversely proportional to mobility, by using a CMOS square root circuit. The temperature variation of the DC output current of the reference current generator alone was 0.77% within the entire temperature range from -15 to 125.

A fully differential folded cascode CMOS OP amp is combined with an adaptive bias OTA to increase the slew rate, and a continuous-time CMFB circuit with a push-pull type combination of a NMOS input and a PMOS input differential amplifiers is used to maximize the output voltage swing. The fabricated OP amp using a 0.8 µm digital CMOS process gives more than three times improvement in slew rate with a 15% increase in DC power consumption and a 7.5% increase in chip area compared to the conventional OP amp fabricated on the same die. The output voltage swing was measured to be -0.75 V -0.7 V at the supply voltage of +/-1.2 V.

An 8-GS/s 4-bit CMOS analog-to-digital converter (ADC) chip was implemented by using a time interleaved flash architecture for very high frequency mixed signal applications with a 0.18-µm single-poly five-metal CMOS process. Eight 1-GS/s flash ADCs were time-interleaved to achieve the 8-GHz sampling rate. Eight uniformly-spaced 1 GHz clocks were generated by using a phase-locked-loop (PLL) with the peak-to-peak and rms jitters of 29.6 ps and 3.78 ps respectively. An input buffer including a preamplifier array (fifteen preamplifiers, four dummy amplifiers and averaging resistors) was shared among eight 1-GS/s flash ADCs to reduce the input capacitance and the mismatches among eight 1-GS/s flash ADCs. The adjacent output nodes of preamplifiers were connected by a resistor (resistor-averaging) to reduce the effects of the input offset voltage and the load mismatches of preamplifiers. A source follower circuit was added at the output node of a preamplifier to drive eight distributed track and hold (DTH) circuits. The Input bandwidth of ADC was measured to be 2.5 GHz. The measured SFDR values at the sampling rate of 8-GS/s were 25 dB and 22 dB for the 1.033 GHz and 2.5 GHz sinusoidal input signals respectively. The power consumption and the active input voltage range were 340 mW and 700 mV peak-to-peak, respectively, at the sampling rate of 8-GS/s and the supply voltage of 1.8 V. The active chip area was 1.32 mm2.

A two-phase boosted voltage (VPP) generator circuit was proposed for use in giga-bit DRAMs. It reduced the maximum gate oxide voltage of pass transistor and the lower limit of supply voltage to VPP and VTN respectively while those for the conventional charge pump circuit are VPP+VDD and 1.5 VTN respectively. Also the pumping current was increased in the new circuit.

An analytic equation was derived for the time jitter of digital NRZ signals due to inter-symbol interference in the PCB transmission lines loaded by DRAM chips which are located in uniform spacing. The inter-symbol interference is caused by a low-pass filtering effect of the loaded transmission line. Good agreements were observed between the equation and measurements with an average error of 17.5%.

A CMOS DFE (decision feedback equalization) receiver with a clock-data skew compensation was implemented for the SSTL (stub-series terminated logic) SDRAM interface. The receiver consists of a 2 way interleaving DFE input buffer for ISI reduction and a X2 over-sampling phase detector for finding the optimum sampling clock position. The measurement results at 1.2 Gbps operation showed the increase of voltage margin by about 20% and the decrease of time jitter in the recovered sampling clock by about 40% by equalization in an SSTL channel with 2 pF 4 stub load. Active chip area and power consumption are 3001000 µm2 and 142 mW, respectively, with a 2.5 V, 0.25 µm CMOS process.

A new CMOS sense-amplifier type flip-flop (SAFF) is proposed. By reducing the discharging time and the loading condition, the setup/hold time is improved by 22%, the input data to clock skew by 46% and the clock to output delay by 4.4%.

This paper presents a quantitative analysis and design methodology of resistor-based phase error averaging scheme for precise multiphase generation. Unlike the previously reported works stating that more averaging simply achieves better linearity, the proposed analysis leads to the existence of the optimum number of averaging contributions by including the effect of the signal transition time. The developed model shows a good agreement with a Monte-Carlo circuit simulation. A test PLL with a 32-phase two-dimensional ring VCO, implemented in a 0.18 µm CMOS, generates monotonous 32 phases with the best linearity performance, showing an INL of +0.27/-1.0 LSB and a DNL of +0.37/-0.27 LSB at 1.2 GHz, and an INL of +0.23/-1.57 LSB and a DNL of +0.44/-0.44 LSB at 1.6 GHz.