Two-Phase Boosted Voltage Generator for Low-Voltage Giga-Bit DRAMs

Young-Hee KIM; Jong-Ki NAM; Sang-Hoon LEE; Hong-June PARK; Joo-Sun CHOI; Choon-Sung PARK; Seung-Han AHN; Jin-Yong CHUNG

Two-Phase Boosted Voltage Generator for Low-Voltage Giga-Bit DRAMs

Young-Hee KIM, Jong-Ki NAM, Sang-Hoon LEE, Hong-June PARK, Joo-Sun CHOI, Choon-Sung PARK, Seung-Han AHN, Jin-Yong CHUNG

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A two-phase boosted voltage (VPP) generator circuit was proposed for use in giga-bit DRAMs. It reduced the maximum gate oxide voltage of pass transistor and the lower limit of supply voltage to VPP and V_TN respectively while those for the conventional charge pump circuit are VPP+VDD and 1.5 V_TN respectively. Also the pumping current was increased in the new circuit.

Publication: IEICE TRANSACTIONS on Electronics Vol.E83-C No.2 pp.266-269

Publication Date: 2000/02/25

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Type of Manuscript: LETTER

Category: Storage Technology

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Young-Hee KIM, Jong-Ki NAM, Sang-Hoon LEE, Hong-June PARK, Joo-Sun CHOI, Choon-Sung PARK, Seung-Han AHN, Jin-Yong CHUNG, "Two-Phase Boosted Voltage Generator for Low-Voltage Giga-Bit DRAMs" in IEICE TRANSACTIONS on Electronics, vol. E83-C, no. 2, pp. 266-269, February 2000, doi: .
Abstract: A two-phase boosted voltage (VPP) generator circuit was proposed for use in giga-bit DRAMs. It reduced the maximum gate oxide voltage of pass transistor and the lower limit of supply voltage to VPP and V_TN respectively while those for the conventional charge pump circuit are VPP+VDD and 1.5 V_TN respectively. Also the pumping current was increased in the new circuit.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_2_266/_p

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@ARTICLE{e83-c_2_266,
author={Young-Hee KIM, Jong-Ki NAM, Sang-Hoon LEE, Hong-June PARK, Joo-Sun CHOI, Choon-Sung PARK, Seung-Han AHN, Jin-Yong CHUNG, },
journal={IEICE TRANSACTIONS on Electronics},
title={Two-Phase Boosted Voltage Generator for Low-Voltage Giga-Bit DRAMs},
year={2000},
volume={E83-C},
number={2},
pages={266-269},
abstract={A two-phase boosted voltage (VPP) generator circuit was proposed for use in giga-bit DRAMs. It reduced the maximum gate oxide voltage of pass transistor and the lower limit of supply voltage to VPP and V_TN respectively while those for the conventional charge pump circuit are VPP+VDD and 1.5 V_TN respectively. Also the pumping current was increased in the new circuit.},
keywords={},
doi={},
ISSN={},
month={February},}

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TY - JOUR
TI - Two-Phase Boosted Voltage Generator for Low-Voltage Giga-Bit DRAMs
T2 - IEICE TRANSACTIONS on Electronics
SP - 266
EP - 269
AU - Young-Hee KIM
AU - Jong-Ki NAM
AU - Sang-Hoon LEE
AU - Hong-June PARK
AU - Joo-Sun CHOI
AU - Choon-Sung PARK
AU - Seung-Han AHN
AU - Jin-Yong CHUNG
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2000
AB - A two-phase boosted voltage (VPP) generator circuit was proposed for use in giga-bit DRAMs. It reduced the maximum gate oxide voltage of pass transistor and the lower limit of supply voltage to VPP and V_TN respectively while those for the conventional charge pump circuit are VPP+VDD and 1.5 V_TN respectively. Also the pumping current was increased in the new circuit.
ER -