A new CMOS sense-amplifier type flip-flop (SAFF) is proposed. By reducing the discharging time and the loading condition, the setup/hold time is improved by 22%, the input data to clock skew by 46% and the clock to output delay by 4.4%.

A cross-coupled charge pump with internal pumping capacitor, which is advantageous from a point of minimizing TFT-LCD driver IC module, is newly proposed in this paper. By using NMOS and PMOS diodes connected to boosting nodes from VIN nodes, the pumping node is precharged to the same value at the pumping node in starting pumping. Since the first-stage charge pump is designed differently from the other stage pumps, a back current of pumped charge from charge pumping node to input stage is prevented. As a pumping clock driver is located in front of pumping capacitor, the driving capacity is improved by reducing a voltage drop of the pumping clock line from parasitic resistor. Finally, a layout area is decreased more compared with the conventional cross-coupled charge pump by using a stack-MIM capacitor. A proposed charge pump for TFT-LCD driver IC is designed with 0.13 µm triple-well DDI process, fabricated, and tested.

We present a new multi-stage charge pump that is suitable for low-voltage operation, and in particular for low voltage flash memory. Compare to the Dickson charge pump and previously reported modified Dickson charge pumps, the proposed charge pump offers the improved pumping voltage gains. The proposed charge pump is composed of a pair of pumps and utilizes the internal boosted voltages of one side of the paired pumps as the charge transferring voltages to the other side. The simulated and measured results indicate that the proposed pump is highly efficient in overcoming both the pumping gain decrease and the current driving capability degradation caused by the threshold voltage of the charge-transfer gate.