IEICE TRANSACTIONS on Electronics
Charge Pump Design for TFT-LCD Driver IC Using Stack-MIM Capacitor
Summary :
A cross-coupled charge pump with internal pumping capacitor, which is advantageous from a point of minimizing TFT-LCD driver IC module, is newly proposed in this paper. By using NMOS and PMOS diodes connected to boosting nodes from VIN nodes, the pumping node is precharged to the same value at the pumping node in starting pumping. Since the first-stage charge pump is designed differently from the other stage pumps, a back current of pumped charge from charge pumping node to input stage is prevented. As a pumping clock driver is located in front of pumping capacitor, the driving capacity is improved by reducing a voltage drop of the pumping clock line from parasitic resistor. Finally, a layout area is decreased more compared with the conventional cross-coupled charge pump by using a stack-MIM capacitor. A proposed charge pump for TFT-LCD driver IC is designed with 0.13 µm triple-well DDI process, fabricated, and tested.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E91-C No.6 pp.928-935
- Publication Date
- 2008/06/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e91-c.6.928
- Type of Manuscript
- Special Section PAPER (Special Section on Analog Circuits and Related SoC Integration Technologies)
- Category
Authors
Gyu-Ho LIM
Sung-Young SONG
Jeong-Hun PARK
Long-Zhen LI
Cheon-Hyo LEE
Tae-Yeong LEE
Gyu-Sam CHO
Mu-Hun PARK
Pan-Bong HA
Young-Hee KIM
Keyword
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Gyu-Ho LIM, Sung-Young SONG, Jeong-Hun PARK, Long-Zhen LI, Cheon-Hyo LEE, Tae-Yeong LEE, Gyu-Sam CHO, Mu-Hun PARK, Pan-Bong HA, Young-Hee KIM, "Charge Pump Design for TFT-LCD Driver IC Using Stack-MIM Capacitor" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 6, pp. 928-935, June 2008, doi: 10.1093/ietele/e91-c.6.928.
Abstract: A cross-coupled charge pump with internal pumping capacitor, which is advantageous from a point of minimizing TFT-LCD driver IC module, is newly proposed in this paper. By using NMOS and PMOS diodes connected to boosting nodes from VIN nodes, the pumping node is precharged to the same value at the pumping node in starting pumping. Since the first-stage charge pump is designed differently from the other stage pumps, a back current of pumped charge from charge pumping node to input stage is prevented. As a pumping clock driver is located in front of pumping capacitor, the driving capacity is improved by reducing a voltage drop of the pumping clock line from parasitic resistor. Finally, a layout area is decreased more compared with the conventional cross-coupled charge pump by using a stack-MIM capacitor. A proposed charge pump for TFT-LCD driver IC is designed with 0.13 µm triple-well DDI process, fabricated, and tested.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.6.928/_p
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@ARTICLE{e91-c_6_928,
author={Gyu-Ho LIM, Sung-Young SONG, Jeong-Hun PARK, Long-Zhen LI, Cheon-Hyo LEE, Tae-Yeong LEE, Gyu-Sam CHO, Mu-Hun PARK, Pan-Bong HA, Young-Hee KIM, },
journal={IEICE TRANSACTIONS on Electronics},
title={Charge Pump Design for TFT-LCD Driver IC Using Stack-MIM Capacitor},
year={2008},
volume={E91-C},
number={6},
pages={928-935},
abstract={A cross-coupled charge pump with internal pumping capacitor, which is advantageous from a point of minimizing TFT-LCD driver IC module, is newly proposed in this paper. By using NMOS and PMOS diodes connected to boosting nodes from VIN nodes, the pumping node is precharged to the same value at the pumping node in starting pumping. Since the first-stage charge pump is designed differently from the other stage pumps, a back current of pumped charge from charge pumping node to input stage is prevented. As a pumping clock driver is located in front of pumping capacitor, the driving capacity is improved by reducing a voltage drop of the pumping clock line from parasitic resistor. Finally, a layout area is decreased more compared with the conventional cross-coupled charge pump by using a stack-MIM capacitor. A proposed charge pump for TFT-LCD driver IC is designed with 0.13 µm triple-well DDI process, fabricated, and tested.},
keywords={},
doi={10.1093/ietele/e91-c.6.928},
ISSN={1745-1353},
month={June},}
Copy
TY - JOUR
TI - Charge Pump Design for TFT-LCD Driver IC Using Stack-MIM Capacitor
T2 - IEICE TRANSACTIONS on Electronics
SP - 928
EP - 935
AU - Gyu-Ho LIM
AU - Sung-Young SONG
AU - Jeong-Hun PARK
AU - Long-Zhen LI
AU - Cheon-Hyo LEE
AU - Tae-Yeong LEE
AU - Gyu-Sam CHO
AU - Mu-Hun PARK
AU - Pan-Bong HA
AU - Young-Hee KIM
PY - 2008
DO - 10.1093/ietele/e91-c.6.928
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2008
AB - A cross-coupled charge pump with internal pumping capacitor, which is advantageous from a point of minimizing TFT-LCD driver IC module, is newly proposed in this paper. By using NMOS and PMOS diodes connected to boosting nodes from VIN nodes, the pumping node is precharged to the same value at the pumping node in starting pumping. Since the first-stage charge pump is designed differently from the other stage pumps, a back current of pumped charge from charge pumping node to input stage is prevented. As a pumping clock driver is located in front of pumping capacitor, the driving capacity is improved by reducing a voltage drop of the pumping clock line from parasitic resistor. Finally, a layout area is decreased more compared with the conventional cross-coupled charge pump by using a stack-MIM capacitor. A proposed charge pump for TFT-LCD driver IC is designed with 0.13 µm triple-well DDI process, fabricated, and tested.
ER -
English
