A negative capacitor is fabricated using poly(vinylidene fluoride-trifluoroethylene) copolymer and connected in series to an a-IZO TFT. It is experimentally demonstrated that the negative capacitance of the negative capacitor can create steep switching in the a-IZO TFT (e.g., a subthreshold slope change from 342mV/decade to 102mV/decade at room-temperature).