Amorphous Indium Zinc Oxide Thin-Film Transistor with Steep Subthreshold Slope by Negative Capacitance
Summary :
A negative capacitor is fabricated using poly(vinylidene fluoride-trifluoroethylene) copolymer and connected in series to an a-IZO TFT. It is experimentally demonstrated that the negative capacitance of the negative capacitor can create steep switching in the a-IZO TFT (e.g., a subthreshold slope change from 342mV/decade to 102mV/decade at room-temperature).
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E99-C No.5 pp.544-546
- Publication Date
- 2016/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E99.C.544
- Type of Manuscript
- BRIEF PAPER
- Category
Authors
Karam CHO
University of Seoul
Jaesung JO
University of Seoul
Changhwan SHIN
University of Seoul
Keyword
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Karam CHO, Jaesung JO, Changhwan SHIN, "Amorphous Indium Zinc Oxide Thin-Film Transistor with Steep Subthreshold Slope by Negative Capacitance" in IEICE TRANSACTIONS on Electronics,
vol. E99-C, no. 5, pp. 544-546, May 2016, doi: 10.1587/transele.E99.C.544.
Abstract: A negative capacitor is fabricated using poly(vinylidene fluoride-trifluoroethylene) copolymer and connected in series to an a-IZO TFT. It is experimentally demonstrated that the negative capacitance of the negative capacitor can create steep switching in the a-IZO TFT (e.g., a subthreshold slope change from 342mV/decade to 102mV/decade at room-temperature).
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E99.C.544/_p
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@ARTICLE{e99-c_5_544,
author={Karam CHO, Jaesung JO, Changhwan SHIN, },
journal={IEICE TRANSACTIONS on Electronics},
title={Amorphous Indium Zinc Oxide Thin-Film Transistor with Steep Subthreshold Slope by Negative Capacitance},
year={2016},
volume={E99-C},
number={5},
pages={544-546},
abstract={A negative capacitor is fabricated using poly(vinylidene fluoride-trifluoroethylene) copolymer and connected in series to an a-IZO TFT. It is experimentally demonstrated that the negative capacitance of the negative capacitor can create steep switching in the a-IZO TFT (e.g., a subthreshold slope change from 342mV/decade to 102mV/decade at room-temperature).},
keywords={},
doi={10.1587/transele.E99.C.544},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - Amorphous Indium Zinc Oxide Thin-Film Transistor with Steep Subthreshold Slope by Negative Capacitance
T2 - IEICE TRANSACTIONS on Electronics
SP - 544
EP - 546
AU - Karam CHO
AU - Jaesung JO
AU - Changhwan SHIN
PY - 2016
DO - 10.1587/transele.E99.C.544
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E99-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2016
AB - A negative capacitor is fabricated using poly(vinylidene fluoride-trifluoroethylene) copolymer and connected in series to an a-IZO TFT. It is experimentally demonstrated that the negative capacitance of the negative capacitor can create steep switching in the a-IZO TFT (e.g., a subthreshold slope change from 342mV/decade to 102mV/decade at room-temperature).
ER -
English
