The increasing demand for millimeter-wave (mmWave) frequencies with wider signal bandwidths, such as 5G NR, requires large investments on test equipment. This work presents a 5G mmWave up/down-converter with a 40 GHz LO, fabricated in custom PCBs with off-the-shelf components. The mmWave converter has broad IF and RF bandwidths of 1∼5 GHz and 21∼45 GHz, and the built-in LO generates 20∼29.5 GHz and 33.5∼40 GHz of output. To achieve high linearity of the converter simultaneously, the LO must produce low-phase-noise and be capable of high harmonics/spur rejection, and design techniques related to these features are demonstrated. Additionally, a reconfigurable IF amplifier for bi-directional conversion is included and demonstrates low gain variation to maintain the linearity of the wideband modulation signals. The final designed converter is tested with 5G OFDM 64-QAM 100 MHz 1-CC (4-CC) signals and shows RF/IF output power of -3/8 dBm with a linear range of 35 (30)/38 (33) dB at an EVM of 25 dB.

This paper describes the design method of a broadband CMOS stacked power amplifier using harmonic control over wide bandwidths in a 0.11,$mu $m standard CMOS process. The high-efficiency can be obtained over wide bandwidths by designing a load impedance circuit as purely reactive as possible to the harmonics with broadband fundamental matching, which is based on continuous Class-F mode of operation. Furthermore, the stacked topology overcomes the low breakdown voltage limit of CMOS transistor and increases output impedance. With a 5-V supply and a fixed matching circuitry, the suggested power amplifier (PA) achieves a saturated output power of over 26.7,dBm and a drain efficiency of over 38% from 1.6,GHz to 2.2,GHz. In W-CDMA modulation signal measurements, the PA generates linear power and power added efficiency of over 23.5,dBm and 33% (@ACLR $=-33$,dBc).

A reconfigurable broadband linear power amplifier (PA) for long-range WLAN applications fabricated in a 180nm RF CMOS process is presented here. The proposed reconfigurable in/output matching network provides the PA with broadband capability at the two center frequencies of 0.5GHz and 0.85GHz. The output matching network is realized by a switchable transformer which shows maximum peak passive efficiencies of 65.03% and 73.45% at 0.45GHz and 0.725GHz, respectively. With continuous wave sources, a 1-dB bandwidth (BW1-dB) according to saturated output power is 0.4-1.2GHz, where it shows a minimum output power with a power added efficiency (PAE) of 25.62dBm at 19.65%. Using an adaptive power cell configuration at the common gate transistor, the measured PA under LTE 16-QAM 20MHz (40MHz) signals shows an average output power with a PAE exceeding 20.22 (20.15) dBm with 7.42 (7.35)% at an ACLRE-UTRA of -30dBc, within the BW1-dB.