Focused Ion Beam (FIB) trimming techniques for circuit optimization for GaAs MMICs by adjusting the parameters of IC components such as resistors, capacitors, microstrip lines, and FETs have been developed. The adjustment is performed by etching of the components and depositing of metal films for micro-strip lines. This technology turned out to be in need of only half a day to optimize the circuit pattern without any further wafer processes, while a conventional method that is comprised of revising mask pattern and following several cycles of wafer process has needed 0.5-1.0 year requiring huge amount of development cost. This technology has been successfully applied to optimization of an X-band low dissipation current single stage MMIC amplifier, and has shown its great feasibility for shortening the turn around time.