Focused Ion Beam Trimming Techniques for MMIC Circuit Optimization
Summary :
Focused Ion Beam (FIB) trimming techniques for circuit optimization for GaAs MMICs by adjusting the parameters of IC components such as resistors, capacitors, microstrip lines, and FETs have been developed. The adjustment is performed by etching of the components and depositing of metal films for micro-strip lines. This technology turned out to be in need of only half a day to optimize the circuit pattern without any further wafer processes, while a conventional method that is comprised of revising mask pattern and following several cycles of wafer process has needed 0.5-1.0 year requiring huge amount of development cost. This technology has been successfully applied to optimization of an X-band low dissipation current single stage MMIC amplifier, and has shown its great feasibility for shortening the turn around time.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E76-C No.6 pp.891-900
- Publication Date
- 1993/06/25
- Publicized
- Online ISSN
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- Type of Manuscript
- Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Technology for Advanced Functions and Size-Reductions)
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Takahide ISHIKAWA, Makio KOMARU, Kazuhiko ITOH, Katsuya KOSAKI, Yasuo MITSUI, Mutsuyuki OTSUBO, Shigeru MITSUI, "Focused Ion Beam Trimming Techniques for MMIC Circuit Optimization" in IEICE TRANSACTIONS on Electronics,
vol. E76-C, no. 6, pp. 891-900, June 1993, doi: .
Abstract: Focused Ion Beam (FIB) trimming techniques for circuit optimization for GaAs MMICs by adjusting the parameters of IC components such as resistors, capacitors, microstrip lines, and FETs have been developed. The adjustment is performed by etching of the components and depositing of metal films for micro-strip lines. This technology turned out to be in need of only half a day to optimize the circuit pattern without any further wafer processes, while a conventional method that is comprised of revising mask pattern and following several cycles of wafer process has needed 0.5-1.0 year requiring huge amount of development cost. This technology has been successfully applied to optimization of an X-band low dissipation current single stage MMIC amplifier, and has shown its great feasibility for shortening the turn around time.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e76-c_6_891/_p
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@ARTICLE{e76-c_6_891,
author={Takahide ISHIKAWA, Makio KOMARU, Kazuhiko ITOH, Katsuya KOSAKI, Yasuo MITSUI, Mutsuyuki OTSUBO, Shigeru MITSUI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Focused Ion Beam Trimming Techniques for MMIC Circuit Optimization},
year={1993},
volume={E76-C},
number={6},
pages={891-900},
abstract={Focused Ion Beam (FIB) trimming techniques for circuit optimization for GaAs MMICs by adjusting the parameters of IC components such as resistors, capacitors, microstrip lines, and FETs have been developed. The adjustment is performed by etching of the components and depositing of metal films for micro-strip lines. This technology turned out to be in need of only half a day to optimize the circuit pattern without any further wafer processes, while a conventional method that is comprised of revising mask pattern and following several cycles of wafer process has needed 0.5-1.0 year requiring huge amount of development cost. This technology has been successfully applied to optimization of an X-band low dissipation current single stage MMIC amplifier, and has shown its great feasibility for shortening the turn around time.},
keywords={},
doi={},
ISSN={},
month={June},}
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TY - JOUR
TI - Focused Ion Beam Trimming Techniques for MMIC Circuit Optimization
T2 - IEICE TRANSACTIONS on Electronics
SP - 891
EP - 900
AU - Takahide ISHIKAWA
AU - Makio KOMARU
AU - Kazuhiko ITOH
AU - Katsuya KOSAKI
AU - Yasuo MITSUI
AU - Mutsuyuki OTSUBO
AU - Shigeru MITSUI
PY - 1993
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E76-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 1993
AB - Focused Ion Beam (FIB) trimming techniques for circuit optimization for GaAs MMICs by adjusting the parameters of IC components such as resistors, capacitors, microstrip lines, and FETs have been developed. The adjustment is performed by etching of the components and depositing of metal films for micro-strip lines. This technology turned out to be in need of only half a day to optimize the circuit pattern without any further wafer processes, while a conventional method that is comprised of revising mask pattern and following several cycles of wafer process has needed 0.5-1.0 year requiring huge amount of development cost. This technology has been successfully applied to optimization of an X-band low dissipation current single stage MMIC amplifier, and has shown its great feasibility for shortening the turn around time.
ER -
English
