Instability of SRAM memory cells derived from aggressive technology scaling has been recently one of the most significant issues. Although a 7T-SRAM cell with an area-tolerable separated read port improves read margins even at sub-1V, it unfortunately results in degradation of write margins. In order to assist the write operation, we address a new memory cell employing a look-ahead body-bias which dynamically controls the threshold voltage. Simulation results have shown improvement in both the write margins and access time without increasing the leakage power derived from the body-bias.