The (InAs)1(GaAs)n short period superlattice (SPS) channel 2DEGFET's with 0.2 µm T-Shaped gates have been successfully fabricated on a GaAs substrate for the first time, and DC and RF performances of the superlattice channel devices have been investigated. Compared to conventional InGaAs alloy channel devices, excellent results in both DC and RF characteristics have been obtained for the SPS channel devices. The dependence of the layer index n for (InAs)1(GaAs)n on device performances has been also investigated. The (InAs)1(GaAs)4 channel samples have shown higher cut-off frequencies as well as superior noise performances compared to those for the (InAs)1(GaAs)5 channel samples. The best noise figure of 0.55 dB with an associated gain of 11.26 dB has been obtained at 12 GHz. The superior performances obtained are due to the improved electron transport properties of (InAs)1(GaAs)n SPS compared to those of InGaAs alloy. These results indicate a great potential of SPS channel structures for high frequency low noise device applications.