IEICE TRANSACTIONS on Electronics
DC and Microwave Performances of (InAs)(GaAs) Short Period Superlattice Channel 2DEGFET's
Summary :
The (InAs)1(GaAs)n short period superlattice (SPS) channel 2DEGFET's with 0.2 µm T-Shaped gates have been successfully fabricated on a GaAs substrate for the first time, and DC and RF performances of the superlattice channel devices have been investigated. Compared to conventional InGaAs alloy channel devices, excellent results in both DC and RF characteristics have been obtained for the SPS channel devices. The dependence of the layer index n for (InAs)1(GaAs)n on device performances has been also investigated. The (InAs)1(GaAs)4 channel samples have shown higher cut-off frequencies as well as superior noise performances compared to those for the (InAs)1(GaAs)5 channel samples. The best noise figure of 0.55 dB with an associated gain of 11.26 dB has been obtained at 12 GHz. The superior performances obtained are due to the improved electron transport properties of (InAs)1(GaAs)n SPS compared to those of InGaAs alloy. These results indicate a great potential of SPS channel structures for high frequency low noise device applications.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E74-C No.12 pp.4114-4118
- Publication Date
- 1991/12/25
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- Type of Manuscript
- Special Section PAPER (Special Issue on Millimeter-Wave/Heterojunction Devices)
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Kazuhiko ONDA, Hideo TOYOSHIMA, Masaaki KUZUHARA, Norihiko SAMOTO, Emiko MIZUKI, Yoichi MAKINO, Tomohiro ITOH, "DC and Microwave Performances of (InAs)(GaAs) Short Period Superlattice Channel 2DEGFET's" in IEICE TRANSACTIONS on Electronics,
vol. E74-C, no. 12, pp. 4114-4118, December 1991, doi: .
Abstract: The (InAs)1(GaAs)n short period superlattice (SPS) channel 2DEGFET's with 0.2 µm T-Shaped gates have been successfully fabricated on a GaAs substrate for the first time, and DC and RF performances of the superlattice channel devices have been investigated. Compared to conventional InGaAs alloy channel devices, excellent results in both DC and RF characteristics have been obtained for the SPS channel devices. The dependence of the layer index n for (InAs)1(GaAs)n on device performances has been also investigated. The (InAs)1(GaAs)4 channel samples have shown higher cut-off frequencies as well as superior noise performances compared to those for the (InAs)1(GaAs)5 channel samples. The best noise figure of 0.55 dB with an associated gain of 11.26 dB has been obtained at 12 GHz. The superior performances obtained are due to the improved electron transport properties of (InAs)1(GaAs)n SPS compared to those of InGaAs alloy. These results indicate a great potential of SPS channel structures for high frequency low noise device applications.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e74-c_12_4114/_p
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@ARTICLE{e74-c_12_4114,
author={Kazuhiko ONDA, Hideo TOYOSHIMA, Masaaki KUZUHARA, Norihiko SAMOTO, Emiko MIZUKI, Yoichi MAKINO, Tomohiro ITOH, },
journal={IEICE TRANSACTIONS on Electronics},
title={DC and Microwave Performances of (InAs)(GaAs) Short Period Superlattice Channel 2DEGFET's},
year={1991},
volume={E74-C},
number={12},
pages={4114-4118},
abstract={The (InAs)1(GaAs)n short period superlattice (SPS) channel 2DEGFET's with 0.2 µm T-Shaped gates have been successfully fabricated on a GaAs substrate for the first time, and DC and RF performances of the superlattice channel devices have been investigated. Compared to conventional InGaAs alloy channel devices, excellent results in both DC and RF characteristics have been obtained for the SPS channel devices. The dependence of the layer index n for (InAs)1(GaAs)n on device performances has been also investigated. The (InAs)1(GaAs)4 channel samples have shown higher cut-off frequencies as well as superior noise performances compared to those for the (InAs)1(GaAs)5 channel samples. The best noise figure of 0.55 dB with an associated gain of 11.26 dB has been obtained at 12 GHz. The superior performances obtained are due to the improved electron transport properties of (InAs)1(GaAs)n SPS compared to those of InGaAs alloy. These results indicate a great potential of SPS channel structures for high frequency low noise device applications.},
keywords={},
doi={},
ISSN={},
month={December},}
Copy
TY - JOUR
TI - DC and Microwave Performances of (InAs)(GaAs) Short Period Superlattice Channel 2DEGFET's
T2 - IEICE TRANSACTIONS on Electronics
SP - 4114
EP - 4118
AU - Kazuhiko ONDA
AU - Hideo TOYOSHIMA
AU - Masaaki KUZUHARA
AU - Norihiko SAMOTO
AU - Emiko MIZUKI
AU - Yoichi MAKINO
AU - Tomohiro ITOH
PY - 1991
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E74-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 1991
AB - The (InAs)1(GaAs)n short period superlattice (SPS) channel 2DEGFET's with 0.2 µm T-Shaped gates have been successfully fabricated on a GaAs substrate for the first time, and DC and RF performances of the superlattice channel devices have been investigated. Compared to conventional InGaAs alloy channel devices, excellent results in both DC and RF characteristics have been obtained for the SPS channel devices. The dependence of the layer index n for (InAs)1(GaAs)n on device performances has been also investigated. The (InAs)1(GaAs)4 channel samples have shown higher cut-off frequencies as well as superior noise performances compared to those for the (InAs)1(GaAs)5 channel samples. The best noise figure of 0.55 dB with an associated gain of 11.26 dB has been obtained at 12 GHz. The superior performances obtained are due to the improved electron transport properties of (InAs)1(GaAs)n SPS compared to those of InGaAs alloy. These results indicate a great potential of SPS channel structures for high frequency low noise device applications.
ER -
English
