This paper describes low voltage write driver with pulse adding circuit. The presented write driver is constructed from the main switch circuit with impedance matching and pulse adding circuits and a timing generator. The main switch circuit is voltage type driver with matching resisters for flexible lines between a write driver and a write head. For 1.2 Gbps operation, the flexible lines have to be treated as transmission lines. Furthermore, to achieve steep rise/fall edge, the pulse adding circuits to generate double of supply voltage, +3.3/-3 V, at rise/fall edge have been developed. The write driver was implemented using 0.35 µm BiCMOS process. The die size is 1.2 mm0.6 mm and the measured results achieved tr/tf of less than 0.25 ns, tp of 0.5 ns and Ip of 73 mA.