+3 V/-3 V Operation 1.2 Gbps Write Driver for Hard Disk Drives

Yasuyuki OKUMA; Kenji MAIO; Hiroyasu YOSHIZAWA

+3 V/-3 V Operation 1.2 Gbps Write Driver for Hard Disk Drives

Yasuyuki OKUMA, Kenji MAIO, Hiroyasu YOSHIZAWA

Full Text Views

0

Cite this

Summary :

This paper describes low voltage write driver with pulse adding circuit. The presented write driver is constructed from the main switch circuit with impedance matching and pulse adding circuits and a timing generator. The main switch circuit is voltage type driver with matching resisters for flexible lines between a write driver and a write head. For 1.2 Gbps operation, the flexible lines have to be treated as transmission lines. Furthermore, to achieve steep rise/fall edge, the pulse adding circuits to generate double of supply voltage, +3.3/-3 V, at rise/fall edge have been developed. The write driver was implemented using 0.35 µm BiCMOS process. The die size is 1.2 mm0.6 mm and the measured results achieved tr/tf of less than 0.25 ns, tp of 0.5 ns and I_p of 73 mA.

Publication: IEICE TRANSACTIONS on Electronics Vol.E87-C No.4 pp.578-581

Publication Date: 2004/04/01

Publicized

Online ISSN

DOI

Type of Manuscript: Special Section PAPER (Special Section on Low-Power System LSI, IP and Related Technologies)

Category

Cite this

Copy

Yasuyuki OKUMA, Kenji MAIO, Hiroyasu YOSHIZAWA, "+3 V/-3 V Operation 1.2 Gbps Write Driver for Hard Disk Drives" in IEICE TRANSACTIONS on Electronics, vol. E87-C, no. 4, pp. 578-581, April 2004, doi: .
Abstract: This paper describes low voltage write driver with pulse adding circuit. The presented write driver is constructed from the main switch circuit with impedance matching and pulse adding circuits and a timing generator. The main switch circuit is voltage type driver with matching resisters for flexible lines between a write driver and a write head. For 1.2 Gbps operation, the flexible lines have to be treated as transmission lines. Furthermore, to achieve steep rise/fall edge, the pulse adding circuits to generate double of supply voltage, +3.3/-3 V, at rise/fall edge have been developed. The write driver was implemented using 0.35 µm BiCMOS process. The die size is 1.2 mm0.6 mm and the measured results achieved tr/tf of less than 0.25 ns, tp of 0.5 ns and I_p of 73 mA.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e87-c_4_578/_p

Copy

@ARTICLE{e87-c_4_578,
author={Yasuyuki OKUMA, Kenji MAIO, Hiroyasu YOSHIZAWA, },
journal={IEICE TRANSACTIONS on Electronics},
title={+3 V/-3 V Operation 1.2 Gbps Write Driver for Hard Disk Drives},
year={2004},
volume={E87-C},
number={4},
pages={578-581},
abstract={This paper describes low voltage write driver with pulse adding circuit. The presented write driver is constructed from the main switch circuit with impedance matching and pulse adding circuits and a timing generator. The main switch circuit is voltage type driver with matching resisters for flexible lines between a write driver and a write head. For 1.2 Gbps operation, the flexible lines have to be treated as transmission lines. Furthermore, to achieve steep rise/fall edge, the pulse adding circuits to generate double of supply voltage, +3.3/-3 V, at rise/fall edge have been developed. The write driver was implemented using 0.35 µm BiCMOS process. The die size is 1.2 mm0.6 mm and the measured results achieved tr/tf of less than 0.25 ns, tp of 0.5 ns and I_p of 73 mA.},
keywords={},
doi={},
ISSN={},
month={April},}

Copy

TY - JOUR
TI - +3 V/-3 V Operation 1.2 Gbps Write Driver for Hard Disk Drives
T2 - IEICE TRANSACTIONS on Electronics
SP - 578
EP - 581
AU - Yasuyuki OKUMA
AU - Kenji MAIO
AU - Hiroyasu YOSHIZAWA
PY - 2004
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E87-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2004
AB - This paper describes low voltage write driver with pulse adding circuit. The presented write driver is constructed from the main switch circuit with impedance matching and pulse adding circuits and a timing generator. The main switch circuit is voltage type driver with matching resisters for flexible lines between a write driver and a write head. For 1.2 Gbps operation, the flexible lines have to be treated as transmission lines. Furthermore, to achieve steep rise/fall edge, the pulse adding circuits to generate double of supply voltage, +3.3/-3 V, at rise/fall edge have been developed. The write driver was implemented using 0.35 µm BiCMOS process. The die size is 1.2 mm0.6 mm and the measured results achieved tr/tf of less than 0.25 ns, tp of 0.5 ns and I_p of 73 mA.
ER -