A one-dimensional lattice of tunnel-diode oscillators is investigated for potential high-speed frequency divider. In the evolution of the investigated lattice, the high-frequency oscillation dominates over the low-frequency oscillation. When a base oscillator is connected at the end, and generates oscillatory signals with a frequency higher than that of the synchronous lattice oscillation, the oscillator output begins to move in the lattice. This one-way property guarantees that the oscillation dynamics of the lattice have only slight influence on the oscillator motion. Moreover, counter-moving pulses in the lattice exhibit pair annihilation through head-on collisions. These lattice properties enable an efficient frequency division method. Herein, the operating principles of the frequency divider are described, along with a numerical validation.

A novel electrical gating circuit is proposed for ultrafast applications in electronics. The circuit employs a two-conductor coupled line, and does not have any active devices such as transistors or diodes. Hence, the ultimate speed of the circuit is limited only by the cutoff frequency of the lines employed. The authors describe the circuit theory and discuss the results of experiments that involved ultrafast measurement using electro-optic sampling techniques. The latter suggests the potential of the circuit to achieve the gatings of at least 80-Gbit/s.

The transition dynamics of a multistable tunnel-diode oscillator is characterized for modulating amplitude of outputted oscillatory signal. The base oscillator possesses fixed-point and limit-cycle stable points for a unique bias voltage. Switching these two stable points by external signal can render an efficient method for modulation of output amplitude. The time required for state transition is expected to be dominated by the aftereffect of the limiting point. However, it is found that its influence decreases exponentially with respect to the amplitude of external signal. Herein, we first describe numerically the pulse generation scheme with the transition dynamics of the oscillator and then validate it with several time-domain measurements using a test circuit.

The authors report on a 22-Gbit/s static decision IC fabricated with 0. 12-µm GaAs MESFETs. The key to attaining high-speed decision IC is the employment of a novel high-speed D-type flip-flop (D-FF). The D-FF succeeds in faster operation through the simplification of the circuitry and the reduction of the transition time of the output voltages.

The injection locking properties of rotary dissipative solitons developed in a closed traveling-wave field-effect transistor (TWFET) are examined. A TWFET can support the waveform-invariant propagation of solitary pulses called dissipative solitons (DS) by balancing dispersion, nonlinearity, dissipation, and field-effect transistor gain. Applying sinusoidal signals to the closed TWFET assumes the injection-locked behavior of the rotary DS; the solitons' velocity is autonomously tuned to match the rotation and external frequencies. This study clarifies the qualitative properties of injection-locked DS using numerical and experimental approaches.

The characteristics of a left-handed traveling-wave transistor, which is formulated as two composite right- and left-handed (CRLH) transmission lines with both passive and active couplings, are discussed for generating unattenuated waves having left-handedness. The design criteria for convective instability are described, together with results of numerical calculations that solve the transmission equation for the device.

A scheme is proposed for generation of large-amplitude short pulses using a transmission line with regularly spaced series-connected tunnel diodes (TDs). In the case where the loaded TD is unique, it is established that the leading edge of the inputted pulse moves slower than the trailing edge, when the pulse amplitude exceeds the peak voltage of the loaded TD; therefore, the pulse width is autonomously reduced through propagation in the line. In this study, we find that this property is true even when the several series-connected TDs are loaded periodically. By these mechanisms, the TD line succeeds in generating large and short pulses. Herein, we clarify the design criteria of the TD line, together with both numerical and experimental validation.

Series-connection of resonant-tunneling diodes (RTDs) has been considered to be efficient in upgrading the output power when it is introduced to oscillator architecture. This work is for clarifying the same architecture also contributes to increasing oscillation frequency because the device parasitic capacitance is reduced M times for M series-connected RTD oscillator. Although this mechanism is expected to be universal, we restrict the discussion to the recently proposed multiphase oscillator utilizing an RTD oscillator lattice loop. After explaining the operation principle, we evaluate how the oscillation frequency depends on the number of series-connected RTDs through full-wave calculations. In addition, the essential dynamics were validated experimentally in breadboarded multiphase oscillators using Esaki diodes in place of RTDs.

The characteristics of two-stage composite right- and left-handed (CRLH) transmission lines are discussed. The dispersion relationship of both balanced and unbalanced two-stage CRLH lines is described, together with numerical calculations that demonstrate their potential.